Infineon SPP11N65C3
High voltage N-channel MOSFET
Marcas: Infineon
Parte do fabricante #: SPP11N65C3
Ficha de dados: SPP11N65C3 Datasheet (PDF)
Pacote/Caso: TO-220
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3426 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaSPP11N65C3 Descrição geral
SPP11N65C3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) power transistor designed for high performance and efficiency in power applications. It has a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 11A. The on-state resistance (RDS(on)) is typically 0.5 ohms, which helps to minimize power losses and improve efficiency.This MOSFET also features a fast switching speed, which makes it suitable for applications that require high-frequency operation. The gate charge (Qg) is around 49nC, ensuring quick and reliable switching performance.The SPP11N65C3 is housed in a TO-220 package, which provides thermal stability and easy mounting on a PCB. It also has a low thermal resistance, which helps to dissipate heat efficiently and maintain a stable operating temperature.
Características
- 650V breakdown voltage
- 11A continuous drain current
- Low on-resistance of 0.65 ohms
- High-speed switching performance
- Enhanced switching reliability
- Low gate charge for efficient operation
Aplicativo
- Switched-mode power supplies
- Motor control applications
- Lighting systems
- Consumer electronics
- Industrial applications
- Automotive systems
- Power factor correction
- Solar inverters
- UPS (Uninterruptible Power Supplies)
- High power density converters
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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RthJC max | 1.0 K/W | VGS(th) max | 3.9 V |
VGS(th) min | 2.1 V | IDpuls max | 33.0 A |
RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
Ptot max | 125.0 W | VDS max | 650.0 V |
Mounting | THT | Mode | Enhancement |
Package | TO-220 | Polarity | N |
ID max | 11.0 A |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SPP11N65C3 chip is a power MOSFET designed for high-performance applications. It offers low on-resistance and high switching speeds, making it suitable for various power management tasks. The chip has a voltage rating of 650V and can handle current up to 11A. It is commonly used in industrial and automotive applications where efficient power control is required.
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Features
SPP11N65C3 is a power MOSFET transistor that offers a low on-resistance and high switching performance. It has a drain-source voltage of 650V, a maximum drain current of 11A, and a minimum threshold voltage of 3V. The transistor is suitable for various power applications such as motor control, high-frequency converters, and power supplies. -
Pinout
The SPP11N65C3 is a power MOSFET with a TO-220 package. It has 3 pins: Gate (G), Drain (D), and Source (S). The Gate pin controls the switching action, while the Drain and Source pins handle the flow of current. This MOSFET is designed for high-power applications. -
Manufacturer
Infineon Technologies AG is the manufacturer of the SPP11N65C3. It is a German semiconductor manufacturing company specializing in the production of power semiconductors and system solutions. -
Application Field
The SPP11N65C3 is a power MOSFET transistor primarily used in high-performance switching applications such as power supplies, motor control, and inverter systems. -
Package
The package type of the SPP11N65C3 chip is TO220-3 MOSFET. The form of the chip is through-hole. The size of the chip is approximately 10.67 mm x 9.78 mm x 4.83 mm.
Ficha de dados PDF
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