Infineon BSZ096N10LS5ATMA1
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R
Marcas: Infineon Technologies Corporation
Parte do fabricante #: BSZ096N10LS5ATMA1
Ficha de dados: BSZ096N10LS5ATMA1 Datasheet (PDF)
Pacote/Caso: PG-TSDSON-8
Status RoHS:
Condição de estoque: 3277 peças, novo original
Tipo de Produto: Transistores
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $1,351 | $1,351 |
200 | $0,523 | $104,600 |
500 | $0,505 | $252,500 |
1000 | $0,497 | $497,000 |
In Stock:3277 PCS
BSZ096N10LS5ATMA1 Descrição geral
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Características
- Low R DS(on) in small package
- Low gate charge
- Lower output charge
- Logic level compatibility
- Higher power density designs
- Higher switching frequency
- Reduced parts count wherever 5V supplies are available
- Driven directly from microcontrollers (slow switching)
- System cost reduction
Aplicativo
- Wireless charging
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | Infineon | Product Category: | MOSFET |
RoHS: | Y | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | TSDSON-8 |
Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 40 A |
Rds On - Drain-Source Resistance: | 9.6 mOhms | Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
Vgs - Gate-Source Voltage: | 10 V | Qg - Gate Charge: | 22 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 69 W | Configuration: | Single |
Channel Mode: | Enhancement | Tradename: | OptiMOS |
Packaging: | Reel | Height: | 1.1 mm |
Length: | 3.3 mm | Series: | OptiMOS 5 |
Transistor Type: | 1 N-Channel | Width: | 3.3 mm |
Brand: | Infineon Technologies | Forward Transconductance - Min: | 22 S |
Development Kit: | EVAL_1K4W_ZVS_FB_CFD7 | Fall Time: | 5.3 ns |
Product Type: | MOSFET | Rise Time: | 4.6 ns |
Factory Pack Quantity: | 5000 | Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 21 ns | Typical Turn-On Delay Time: | 5.7 ns |
Part # Aliases: | BSZ096N10LS5 SP001352994 | Unit Weight: | 0.001295 oz |
Tags | BSZ09, BSZ0, BSZ | RHoS | yes |
PBFree | yes |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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BSZ096N10LS5ATMA1 is a power transistor chip designed for high-speed switching applications in power supplies, motor control, and LED lighting. It features a low on-state resistance, high current rating, and low gate charge for improved efficiency and performance. The chip is part of the SuperFET® MOSFET family from Infineon Technologies.
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Equivalent
Equivalent products of BSZ096N10LS5ATMA1 chip are BSZ096N10LS5ATMA1A, BSZ097N10LS5ATMA1, BSZ098N10LS5ATMA1, BSZ099N10LS5ATMA1, BSZ100N10LS5ATMA1, and BSZ101N10LS5ATMA1. These are all similar chips with varying specifications that can be used interchangeably in different applications. -
Features
BSZ096N10LS5ATMA1 is a N-channel 100V Power MOSFET with a low RDS(on) of 9.6mΩ and a high current rating of 76A, making it suitable for high power applications. It also features a TO-220 package with a D2PAK footprint, enhancing thermal performance and ease of mounting. -
Pinout
The BSZ096N10LS5ATMA1 is a single N-channel 100V MOSFET transistor with a power package. It has 5 pins (Gate, Source, Drain, and two body diode pins). Pin functions include Gate (input), Source (ground), Drain (output), and body pins (connection to the internal body diodes). -
Manufacturer
The manufacturer of the BSZ096N10LS5ATMA1 is Infineon Technologies, a German semiconductor manufacturing company specializing in designing and producing high-performance semiconductors for various industries, including automotive, industrial, and consumer electronics. They are known for their innovative products and technology solutions. -
Application Field
The BSZ096N10LS5ATMA1 is a power MOSFET transistor commonly used in automotive applications such as power steering systems, electric pumps, and motor control. It is also used in industrial applications for power management, battery protection, and DC-DC converters due to its high efficiency and low power dissipation characteristics. -
Package
The BSZ096N10LS5ATMA1 chip comes in a Power-SO8 package type and is in a surface-mount form. It has a size of 5mm x 6mm.
Ficha de dados PDF
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