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$5000Infineon SPD09P06PL
Built with a durable DPAK-2 package
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Infineon
Parte do fabricante #: SPD09P06PL
Ficha de dados: SPD09P06PL Ficha de dados (PDF)
Pacote/Caso: TO-252-3
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 2.324 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SPD09P06PL Descrição geral
The Infineon SPD09P06PL Power MOSFET is a high-performance transistor ideal for a range of high-current applications. With its low on-state resistance and high continuous drain current, this MOSFET is designed to deliver efficient power management. The TO-252 package houses the transistor, which operates at a maximum drain-source voltage of 60V and a gate threshold voltage of 2-4V. Its maximum gate-source voltage of ±20V makes it versatile for various applications. Additionally, the SPD09P06PL is designed for low conduction and switching losses, ensuring high efficiency in power management. Its junction-to-case thermal resistance of 3.2 °C/W supports effective heat dissipation, contributing to the reliability and longevity of the transistor in high-power operations
![spd09p06pl spd09p06pl](/files/uploads/product/b/spd09p06pl20171012193546_3712.jpg)
Características
- Advanced signal processing
- High-speed serial communication
- Real-time fault detection
- Error correction mechanism
![spd09p06pl spd09p06pl](/files/uploads/product/b/spd09p06pl20171021154257_2909.jpg)
Aplicativo
- Manage batteries well
- Convert DC to DC easily
- Telecommunication systems
![spd09p06pl spd09p06pl](/files/uploads/product/b/spd09p06pl20171117210314_9676.jpg)
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 9.7 A | Rds On - Drain-Source Resistance | 400 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 42 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 89 ns |
Height | 2.3 mm | Length | 6.5 mm |
Moisture Sensitive | Yes | Product Type | MOSFET |
Rise Time | 168 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 49 ns | Typical Turn-On Delay Time | 11 ns |
Width | 6.22 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SPD09P06PL is a power MOSFET chip designed for high-speed switching applications in power supplies and motor control circuits. It offers low on-resistance and high current capabilities, making it suitable for efficient power management. The chip features protection against thermal overloading and short-circuiting, ensuring reliable performance in various electronic devices.
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Equivalent
The equivalent products of the SPD09P06PL chip are the NDP6020P, RFP12P10, IPS7091P, and STP10NK60Z. -
Features
SPD09P06PL is a power MOSFET transistor with an N-channel and a drain-source voltage of 60 V. It has a low on-resistance and is designed for use in high-efficiency power management applications. -
Pinout
The SPD09P06PL is a power MOSFET with a pin count of 3. Its function is to control the flow of power in electronic circuits, allowing or blocking the current based on the input signals. -
Manufacturer
The manufacturer of the SPD09P06PL is Vishay Siliconix. It is a company specializing in manufacturing power MOSFETs, integrated circuits, resistors, capacitors, and other discrete semiconductors. -
Application Field
The SPD09P06PL is a power MOSFET commonly used in various applications such as power supplies, motor control, and switching circuits. It can also be utilized in automotive systems, battery management, and industrial control. -
Package
The SPD09P06PL chip typically comes in the TO-252(DPAK) package type, with a form factor of a single inline package (SIP). Its size measures approximately 6.45mm x 9.35mm x 2.25mm.
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