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Infineon BSC070N10NS5ATMA1
Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R
Marcas: Infineon Technologies Corporation
Parte do fabricante #: BSC070N10NS5ATMA1
Ficha de dados: BSC070N10NS5ATMA1 Datasheet (PDF)
Pacote/Caso: PG-TDSON-8
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3734 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaBSC070N10NS5ATMA1 Descrição geral
MOSFET, N-CH, 100V, 80A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Características
- Optimized for synchronous rectification
- Ideal for high switching frequency
- Output capacitance reduction of up to 44%
- R DS(on) reduction of up to 43% from previous generation
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Low voltage overshoot
Aplicativo
- Telecom
- Server
- Solar
- Low voltage drives
- Light electric vehicles
- Adapter
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | TDSON-8 |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 80 A |
| Rds On - Drain-Source Resistance: | 7 mOhms | Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Vgs - Gate-Source Voltage: | 10 V | Qg - Gate Charge: | 30 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 83 W | Configuration: | Single |
| Channel Mode: | Enhancement | Tradename: | OptiMOS |
| Packaging: | Reel | Height: | 1.27 mm |
| Length: | 5.9 mm | Series: | OptiMOS 5 |
| Transistor Type: | 1 N-Channel | Width: | 5.15 mm |
| Brand: | Infineon Technologies | Forward Transconductance - Min: | 38 S |
| Fall Time: | 6 ns | Product Type: | MOSFET |
| Rise Time: | 5 ns | Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 13 ns | Part # Aliases: | BSC070N10NS5 SP001241596 |
| Unit Weight: | 0.017870 oz | Tags | BSC070N10NS5, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC |
| RHoS | yes | PBFree | yes |
| HalogenFree | yes | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, R-PDSO-F5 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 14 A | Drain-source On Resistance-Max | 0.007 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F5 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 320 A |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | FLAT | Terminal Position | DUAL |
| Transistor Application | SWITCHING |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The BSC070N10NS5ATMA1 chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed to handle high levels of currents and voltages efficiently. It features low on-resistance, meaning it minimizes power losses and provides higher power density. The chip is commonly used in a variety of applications such as power supplies, electric vehicles, industrial systems, and more.
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Equivalent
Some equivalent products of the BSC070N10NS5ATMA1 chip include BSC070N10NS5S, BSC070N10NS5G, BSC070N10NS5, BSC070N10NS5 AEC-Q101, BSC070N10NS5 E6327, and BSC070N10NS5ATMA1-ND. -
Features
The BSC070N10NS5ATMA1 is a power MOSFET transistor with a drain source voltage rating of 100V, a continuous drain current of 78A, and a low on-resistance of 7mΩ. It is designed for use in various high power applications, such as motor control, power supplies, and inverter designs. -
Pinout
The BSC070N10NS5ATMA1 is a single N-channel MOSFET transistor. It has 8 pins in total, including the gate (G), drain (D), source (S), and substrate (B) pins. The pin count and functions are as follows: 1. Pin 1: Gate (G) 2. Pin 2: Gate (G) 3. Pin 3: Drain (D) 4. Pin 4: Source (S) 5. Pin 5: Source (S) 6. Pin 6: Substrate (B) 7. Pin 7: Substrate (B) 8. Pin 8: Drain (D) -
Manufacturer
The manufacturer of the BSC070N10NS5ATMA1 is Infineon Technologies. Infineon is a German semiconductor company that designs, manufactures, and markets a wide range of semiconductor solutions for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The BSC070N10NS5ATMA1 is a power MOSFET transistor. It can be used in various applications such as motor control, power supplies, and high-frequency switching circuits. -
Package
The BSC070N10NS5ATMA1 chip has a PowerPAK 1212-8 package type, is an N-channel MOSFET form, and has a size of 3.3mm x 3.3mm.
Ficha de dados PDF
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