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Infineon IRFR5410PBF
IRFR5410 - 100V Single P-Channel Power MOSFET in a D-Pak package
Marcas: Infineon
Parte do fabricante #: IRFR5410PBF
Ficha de dados: IRFR5410PBF Datasheet (PDF)
Pacote/Caso: TO-252-3
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3211 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaIRFR5410PBF Descrição geral
The IRFR5410PBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-efficiency applications. It features a low on-resistance of 0.03 ohms, which allows for high current capability and low power dissipation. The device is rated for a voltage of 100V and a continuous drain current of 23A, making it suitable for a wide range of power switching applications.The IRFR5410PBF is housed in a TO-252 package, which offers easy mounting and thermal dissipation. It also features a high-speed switching capability, making it ideal for high-frequency applications. The MOSFET is designed to operate over a wide temperature range, from -55°C to 150°C, ensuring reliability in various operating conditions.Additionally, the IRFR5410PBF has a low gate charge and capacitance, allowing for fast switching speeds and reduced switching losses. It also features a rugged design that can withstand high energy pulses and transients.
Características
- Advanced MOSFET technology
- Low on-resistance
- Fast switching speed
- High power dissipation
- Improved thermal performance
- RoHS compliant
- Halogen-free
- TO-252 packaging
- Suitable for high efficiency power management applications
Aplicativo
- Motor control
- Power management
- Switch mode power supplies
- Battery charging circuits
- Solar panel inverters
- Industrial control systems
- Variable frequency drives
- Automotive electronics
- LED lighting
- Electric vehicle power systems
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 13 A | Rds On - Drain-Source Resistance | 205 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 38.7 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 66 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 46 ns | Height | 2.3 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 58 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 15 ns | Width | 6.22 mm |
| Part # Aliases | SP001557110 |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IRFR5410PBF is a power MOSFET transistor designed for use in switching applications. It has a low on-resistance and high-speed switching capabilities, making it suitable for power management in various electronic devices. With a compact size and efficient performance, the IRFR5410PBF chip is commonly used in power supplies, motor control, and automotive applications.
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Equivalent
The equivalent products of the IRFR5410PBF chip are the IRFR5410, IRFG4BC40UD and IRFZ44N. These are all power MOSFET transistors with similar specifications and characteristics, suitable for a range of applications such as power supply, motor control, and switching circuits. -
Features
IRFR5410PBF is a N-channel power MOSFET with a Vds voltage rating of 100V, a continuous drain current of 12A, and a low on-resistance of 0.23 ohms. It has a TO-252 package, making it suitable for a variety of applications including power supplies, motor control, and lighting control. -
Pinout
The IRFR5410PBF is a power MOSFET with a TO-252 package. It has 3 pins, including a gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source pins, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the IRFR5410PBF is Infineon Technologies AG. Infineon Technologies is a German semiconductor manufacturer that produces a wide range of power semiconductors, sensors, and microcontrollers for automotive, industrial, and consumer electronics applications. The company is a leading supplier of power electronics components and solutions worldwide. -
Application Field
The IRFR5410PBF is commonly used in applications such as power supplies, motor control, and automotive systems. It is also utilized in battery management systems, LED lighting, and audio amplifiers due to its high current handling capacity and low on-state resistance. -
Package
The IRFR5410PBF chip is a power MOSFET packaged in a TO-252 form, also known as DPAK (TO-263) package. Its size is typically around 6.7mm x 7.7mm x 2.2mm.
Ficha de dados PDF
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Infineon Technologies Corporation
100V Single N-Channel HEXFET Power MOSFET in a PQF...
The ordering process was incredibly easy and the components arrived quickly.