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$5000NXP MRFE6S9060NR1
RF Mosfet 28 V 450 mA 880MHz 21.1dB 14W TO-270-2
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Marcas: NXP
Parte do fabricante #: MRFE6S9060NR1
Ficha de dados: MRFE6S9060NR1 Ficha de dados (PDF)
Pacote/Caso: TO-270
Tipo de Produto: RF FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MRFE6S9060NR1 Descrição geral
The MRFE6S9060NR1 is a powerful LDMOS transistor engineered for demanding applications in mobile radio, cellular base stations, and wireless communications systems. With a frequency range of 860-960 MHz, it can deliver an impressive 60 watts of output power, making it a highly capable and versatile component for high-power applications. Its high gain of 18.5 dB ensures superior linearity and efficiency, catering to the needs of advanced communication systems. Moreover, the transistor boasts a drain efficiency of 60%, effectively maximizing power output while minimizing heat dissipation, resulting in reliable and consistent performance
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Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | NXP | Product Category: | RF MOSFET Transistors |
RoHS: | Details | Transistor Polarity: | N-Channel |
Technology: | Si | Id - Continuous Drain Current: | 1.5 A |
Vds - Drain-Source Breakdown Voltage: | 66 V | Rds On - Drain-Source Resistance: | - |
Operating Frequency: | 1 GHz | Gain: | 21.1 dB |
Output Power: | 14 W | Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 150 C | Mounting Style: | SMD/SMT |
Package / Case: | TO-270 | Packaging: | MouseReel |
Brand: | NXP Semiconductors | Channel Mode: | Enhancement |
Configuration: | Single | Height: | 2.08 mm |
Length: | 9.7 mm | Moisture Sensitive: | Yes |
Product Type: | RF MOSFET Transistors | Series: | MRFE6S9060N |
Factory Pack Quantity: | 500 | Subcategory: | MOSFETs |
Type: | RF Power MOSFET | Vgs - Gate-Source Voltage: | - 500 mV, 12 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V | Width: | 6.15 mm |
Part # Aliases: | 935309637528 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The MRFE6S9060NR1 chip is a high-power RF transistor designed for use in industrial and commercial applications. It operates at a frequency range of 900 MHz to 960 MHz and provides high linearity and efficiency. The chip offers a max output power of 60 watts, making it suitable for various RF power amplifier designs. It is commonly used in wireless communication systems and other high-power RF applications.
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Equivalent
There are no direct equivalent products of the MRFE6S9060NR1 chip. However, there are similar products available from other manufacturers, such as the MRF6S9060NR1 from Freescale Semiconductor or the BLF6G27-150 from NXP Semiconductors, which may serve as alternatives. These options should be researched for compatibility and specifications before considering them as replacements. -
Features
The MRFE6S9060NR1 is a high-power RF transistor that operates in the frequency range of 860-960 MHz. It has a power output of 60 Watts and offers high gain and efficiency. It is designed for use in applications such as mobile radio, base station, and broadcast systems. -
Pinout
The MRFE6S9060NR1 is a 60-watt RF power field-effect transistor (FET) with a pin count of 4. The pin configuration includes a gate, drain, and source, which are the standard pins found in power FET devices. This transistor is commonly used in high-frequency applications such as wireless communications and radar systems. -
Manufacturer
The manufacturer of the MRFE6S9060NR1 is NXP Semiconductors. NXP Semiconductors is a multinational semiconductor manufacturer that specializes in providing high-performance mixed-signal electronics and embedded systems solutions. -
Application Field
The MRFE6S9060NR1 is a high-frequency transistor designed for use in industrial and scientific applications, including laser drivers, plasma generators, and radio frequency (RF) amplifiers. -
Package
The MRFE6S9060NR1 chip has a package type called "MO-150AB" with a form factor known as "LDMOS." It is a high-voltage, high-power RF power field-effect transistor (FET) with a size of approximately 9.25mm x 22.6mm x 6.1mm.
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