NXP MRF6V2300NBR1
VHV6 300W TO272WB4N RF MOSFET Transistors
Marcas: Nxp
Parte do fabricante #: MRF6V2300NBR1
Ficha de dados: MRF6V2300NBR1 Datasheet (PDF)
Pacote/Caso: TO-272-4
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2723 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
Adicionar à lista técnicaMRF6V2300NBR1 Descrição geral
The MRF6V2300NBR1 is a high-power RF LDMOS transistor designed for use in broadband and narrowband applications in the HF, VHF, and UHF frequency ranges. It operates at a frequency range of 1.8-470 MHz with a 30:1 VSWR load mismatch capability, making it suitable for a wide variety of radio frequency amplification tasks.This transistor delivers a typical output power of 300 watts with a power gain of 16 dB at 230 MHz, making it ideal for high-power RF amplification applications. It features excellent thermal stability, which ensures reliable performance even under extreme operating conditions.The MRF6V2300NBR1 is housed in a compact, air-cavity-style package, which helps in efficient heat dissipation and ensures long-term reliability. It is also designed to withstand high-voltage and high-current conditions, making it suitable for demanding RF amplifier applications.
Características
- Frequency: 2300 MHz
- Output Power: 300W
- Gain: 23 dB
- Efficiency: 67%
- Operating Voltage: 50V
- Operating Temperature: -40°C to +150°C
- High ruggedness
- Broadband performance
Aplicativo
- Avionics
- Radar systems
- Broadcast applications
- Industrial heating and welding equipment
- RF energy applications
- Medical equipment
- Satellite communication systems
- Radio frequency identification (RFID)
- Television transmitters
- Cellular infrastructure
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Product Category | RF MOSFET Transistors | RoHS | Details |
Transistor Polarity | N-Channel | Technology | Si |
Vds - Drain-Source Breakdown Voltage | 110 V | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Package / Case | TO-272-4 | Brand | NXP Semiconductors |
Channel Mode | Enhancement | Configuration | Single Dual Drain Dual Gate |
Height | 2.64 mm | Length | 23.67 mm |
Moisture Sensitive | Yes | Product Type | RF MOSFET Transistors |
Series | MRF6V2300N | Factory Pack Quantity | 500 |
Subcategory | MOSFETs | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | - 500 mV, 10 V | Width | 9.07 mm |
Part # Aliases | 935309671528 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
-
Etapa1 :produtos
-
Etapa2 :Embalagem a vácuo
-
Etapa3 :Saco antiestático
-
Etapa4 :Embalagem individual
-
Etapa5 :Caixas de embalagem
-
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
-
The MRF6V2300NBR1 is a high power RF amplifier chip designed for use in various applications such as industrial, scientific, and medical (ISM) bands. It operates in the frequency range of 2300-2700 MHz and offers high efficiency and gain for power amplification needs. This chip is commonly used in wireless communication systems, radar systems, and satellite communications.
-
Equivalent
Some equivalent products of MRF6V2300NBR1 chip are NXP MRFE6VS25N, Freescale MRF6V4300NBR1, and Ampleon BLF188XR. These chips are also high-power RF transistors suitable for various RF power applications. -
Features
The MRF6V2300NBR1 is a high power RF MOSFET transistor designed for broadband RF amplifier applications. It features a frequency range of 1.8-512 MHz, a power output of 300W, a gain of 16dB, and a high efficiency of 70%. Additionally, it has a rugged design for reliable performance in harsh environments. -
Pinout
The MRF6V2300NBR1 is a power amplifier transistor with a pin count of 4. Pin 1 is the emitter, pin 2 is the gate, pin 3 is the collector, and pin 4 is the source. It is typically used for high power radar and MRI applications. -
Manufacturer
The MRF6V2300NBR1 is manufactured by NXP Semiconductors, a Dutch-American semiconductor manufacturer. NXP Semiconductors specializes in designing and producing a wide range of semiconductor solutions for automotive, industrial, and IoT applications. -
Application Field
The MRF6V2300NBR1 is commonly used in high-power RF amplifier applications, such as radar systems, military communications, and industrial heating systems. It is specifically designed for frequencies up to 2300 MHz and offers high power output and efficiency, making it suitable for a wide range of RF power amplification needs. -
Package
The MRF6V2300NBR1 chip is a surface mount package type with a form of flange-mount and a size of 2.000 x 1.310 x 0.510 inches.
Ficha de dados PDF
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
-
Temos produtos ricos que podem atender às suas diversas necessidades.
-
A quantidade mínima de pedido começa em 1 unidade.
-
A menor taxa de envio internacional começa em US$ 0,00
-
365 dias de garantia de qualidade para todos os produtos