NXP MRFE6P3300HR3

Part points

• The MRFE6P3300HR3 is a high-power RF power transistor designed for use in industrial, scientific, and medical (ISM) applications. It operates at 3300 MHz with a power output of up to 300W and features high efficiency and reliability. This chip is commonly used in RF heating, plasma processing, and high-power amplifiers.

• Equivalent

  The equivalent products of the MRFE6P3300HR3 chip are the MRF6VP3300H and the MRF6VP3300HR6, which are also LDMOS transistors designed for high-power applications in the 1.8-600 MHz frequency range. These chips have similar specifications and performance characteristics to the MRFE6P3300HR3.

• Features

  The MRFE6P3300HR3 is a high-power RF transistor designed for 300W pulsed applications in frequencies up to 3300 MHz. It features superior ruggedness, high gain, and low distortion, making it ideal for use in high-power RF applications such as radar systems and communication equipment.

• Pinout

  The MRFE6P3300HR3 is a High Power RF LDMOS transistor with a pin count of 4. It has the following functions: Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4: Source. It is designed for high power applications in the HF, VHF, and UHF frequencies.

• Manufacturer

  The MRFE6P3300HR3 is manufactured by NXP Semiconductors, a Dutch-American semiconductor manufacturer specializing in a wide range of products for the automotive, industrial, mobile, and communication sectors. NXP Semiconductors is known for producing high-performance RF power transistors, including the MRFE6P3300HR3 for RF applications.

• Application Field

  The MRFE6P3300HR3 is primarily used in high-power RF amplifier applications, such as in telecommunications, radar systems, and industrial heating processes. It is commonly found in high-frequency and high-power amplification systems that require efficient and reliable performance.

• Package

  The MRFE6P3300HR3 chip is a RF power transistor packaged in a NI-1230H-4S form with 4 leads. It has a size of 10.7 x 14.2 x 3.92 mm.