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NXP MRFE6S9125NR1
N-channel RF MOSFET, 66V, 5-pin TO-270, with Tape and Reel
Marcas: Nxp
Parte do fabricante #: MRFE6S9125NR1
Ficha de dados: MRFE6S9125NR1 Datasheet (PDF)
Pacote/Caso: TO-270-4
Status RoHS:
Condição de estoque: 3976 peças, novo original
Tipo de Produto: Transistores
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
| Quantidade | Preço unitário | Preço Externo |
|---|---|---|
| 1 | $45,808 | $45,808 |
| 200 | $17,728 | $3545,600 |
| 500 | $17,104 | $8552,000 |
| 1500 | $16,798 | $25197,000 |
In Stock:3976 PCS
MRFE6S9125NR1 Descrição geral
The MRFE6S9125NR1 is a high-power RF transistor designed for high-performance applications in the industrial, scientific, and medical (ISM) frequency bands. It operates in the 915 MHz to 928 MHz frequency range, making it ideal for applications such as industrial heating, medical diathermy, and scientific research.This transistor provides excellent gain and efficiency, with a typical gain of 16 dB and a drain efficiency of 65% at 915 MHz. It can deliver up to 125 watts of RF power with a 50 ohm load, making it suitable for high-power applications that require reliable performance.The MRFE6S9125NR1 features a rugged design that can withstand harsh operating conditions, making it suitable for industrial and scientific applications where durability is essential. It also has built-in protection features such as overtemperature and overvoltage protection, ensuring reliable operation and preventing damage to the transistor.
Características
- Frequency Range: 50 MHz to 1 GHz
- Output Power: 31.6 W (PEP) @ 960 MHz
- Efficiency: 65% @ 960 MHz
- Gain: 16 dB @ 960 MHz
- Extended Power Gain for High Efficiency
- Integrated ESD Protection
Aplicativo
- Land mobile radio systems
- RF linear power amplifiers
- Industrial, scientific, and medical (ISM) applications
- FM and digital modulated systems
- Automotive radar systems
- Communication systems
- Television and radio broadcast systems
- Test equipment
- PCB and module design
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Category | RF MOSFET Transistors | RoHS | Details |
| Transistor Polarity | N-Channel | Technology | Si |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 66 V | Operating Frequency | 880 MHz |
| Gain | 20.2 dB | Output Power | 27 W |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
| Mounting Style | SMD/SMT | Package / Case | TO-270-4 |
| Brand | NXP Semiconductors | Channel Mode | Enhancement |
| Configuration | Single | Height | 2.64 mm |
| Length | 17.58 mm | Moisture Sensitive | Yes |
| Number of Channels | 1 Channel | Product Type | RF MOSFET Transistors |
| Series | MRFE6S9125N | Factory Pack Quantity | 500 |
| Subcategory | MOSFETs | Type | RF Power MOSFET |
| Vgs - Gate-Source Voltage | - 500 mV, 12 V | Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 9.07 mm | Part # Aliases | 935314059528 |
| Unit Weight | 0.058073 oz |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The MRFE6S9125NR1 chip is a high-performance RF power amplifier module designed for wireless infrastructure applications. It operates in the frequency range of 2110-2170 MHz, making it suitable for use in 3G and 4G base stations and small cell systems. It offers high gain and efficiency, allowing for extended coverage and improved network performance.
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Equivalent
Some equivalent products of the MRFE6S9125NR1 chip include MRF6S9125N, MRF6S9145N, and MRF6S9160N. These chips are all part of the same series and have similar specifications, making them suitable alternatives for various applications. -
Features
The MRFE6S9125NR1 is a high-frequency power transistor with a frequency range up to 1 GHz. It has a single-sided active device configuration, a high gain for better power performance, and a rugged design for high-reliability applications. -
Pinout
The MRFE6S9125NR1 is a high-performance RF power field-effect transistor. It has 11 pins and functions as a power amplifier in wireless communication applications. -
Manufacturer
NXP Semiconductors is the manufacturer of the MRFE6S9125NR1. It is a semiconductor company that designs and produces a wide range of integrated circuits and semiconductor solutions for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The MRFE6S9125NR1 is a high-power RF transistor commonly used in applications such as cellular base stations, broadcast transmitters, and ISM (industrial, scientific, and medical) equipment. It offers high performance, high power output, and excellent linearity, making it suitable for various RF power amplifier designs. -
Package
The MRFE6S9125NR1 chip is available in a power MOSFET package type called NI-780H. The chip is in a surface mount form with a size of 18.4mm x 13.6mm.
Ficha de dados PDF
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