ON FQD12N20LTM
N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FQD12N20LTM
Ficha de dados: FQD12N20LTM Datasheet (PDF)
Pacote/Caso: TO-252
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3315 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFQD12N20LTM Descrição geral
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Características
- 9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
- Low gate charge ( Typ. 16nC)
- Low Crss ( Typ. 17pF)
- 100% avalanche tested
- Low level gate drive requirement allowing direct oprationfrom logic drivers
Aplicativo
- LED TV
- CRT/RPTV
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Status | Active | CAD Models | |
Compliance | PbAHP | Package Type | DPAK-3 / TO-252-3 |
Case Outline | 369AS | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 2500 | ON Target | Y |
Channel Polarity | N-Channel | Configuration | Single |
V(BR)DSS Min (V) | 200 | VGS Max (V) | ±30 |
VGS(th) Max (V) | 2 | ID Max (A) | 9 |
PD Max (W) | 55 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 320 | RDS(on) Max @ VGS = 10 V (mΩ) | 280 |
Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 16 |
Ciss Typ (pF) | 830 | Pricing ($/Unit) | $0.3072Sample |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | DMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 200 |
feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | 2 |
feature-maximum-continuous-drain-current-a | 9 | feature-maximum-drain-source-resistance-mohm | 280@10V |
feature-typical-gate-charge-vgs-nc | 16@5V | feature-typical-gate-charge-10v-nc | |
feature-typical-input-capacitance-vds-pf | 830@25V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-supplier-package | DPAK | feature-standard-package-name1 | TO-252 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FQD12N20LTM chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It has a low on-resistance and a high switching speed, making it suitable for a variety of power management tasks. The chip can handle a maximum drain current of 12A and a maximum voltage of 200V. It is commonly used in applications such as motor control, power supplies, and inverters.
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Equivalent
There are no direct equivalent products of the FQD12N20LTM chip, as it is a specific transistor designed by Fairchild Semiconductor. However, there may be alternative transistors with similar specifications and features that can be used in its place. -
Features
The FQD12N20LTM is a 200V N-Channel MOSFET transistor. It features a low on-resistance, fast switching speed, high ruggedness, and is designed for various power switching applications. -
Pinout
The FQD12N20LTM is a 200V, N-channel MOSFET. It has a TO-252 package with 3 pins. Pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. -
Manufacturer
The manufacturer of the FQD12N20LTM is Fairchild Semiconductor. Fairchild Semiconductor is a global company specializing in power and analog semiconductor products. -
Application Field
The FQD12N20LTM is a power MOSFET transistor commonly used in various applications such as power supplies, motor control, and high-frequency circuits. It is particularly suitable for applications where high power and high efficiency are required due to its low on-resistance and fast switching capabilities. -
Package
The FQD12N20LTM chip is a MOSFET transistor. It is available in a TO-252 (DPAK) package type, which has three pins. The size of the package is around 6.6mm x 6.2mm x 1.7mm.
Ficha de dados PDF
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