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ON FDS86252
N-Channel 150 V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDS86252
Ficha de dados: FDS86252 Datasheet (PDF)
Pacote/Caso: SO-8
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3031 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFDS86252 Descrição geral
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Características
- Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
Aplicativo
- Consumer Appliances
- DC-DC Conversion
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V | Id - Continuous Drain Current: | 4.5 A |
| Rds On - Drain-Source Resistance: | 55 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.4 V | Qg - Gate Charge: | 10.6 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 5 W | Channel Mode: | Enhancement |
| Tradename: | PowerTrench | Series: | FDS86252 |
| Packaging: | MouseReel | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 2.9 ns |
| Forward Transconductance - Min: | 13 S | Height: | 1.75 mm |
| Length: | 4.9 mm | Product Type: | MOSFET |
| Rise Time: | 1.6 ns | Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns | Typical Turn-On Delay Time: | 9.2 ns |
| Width: | 3.9 mm | Unit Weight: | 0.004586 oz |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | TMOS | feature-configuration | Single Quad Drain Triple Source |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 150 |
| feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 4.5 | feature-maximum-drain-source-resistance-mohm | 55@10V |
| feature-typical-gate-charge-vgs-nc | 10.6@10V|5.2@5V | feature-typical-gate-charge-10v-nc | 10.6 |
| feature-typical-input-capacitance-vds-pf | 718@75V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 8 | |
| feature-supplier-package | SOIC | feature-standard-package-name1 | SO |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | No |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDS86252 is a chip used for driving N-Channel MOSFETs in various switching applications, such as motor control, power supplies, and lighting systems. It is equipped with a high-speed gate drive to optimize switching characteristics, and it offers low on-resistance and low gate charge. The chip provides protection features like thermal shutdown, overcurrent protection, and UVLO (Undervoltage Lockout), making it suitable for a wide range of applications that require efficient and reliable MOSFET control.
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Equivalent
The FDS86252 chip is a dual N-channel PowerTrench MOSFET. There are several equivalent products available from different manufacturers, including the IRF7313, SiR427DP, and STP9NK60ZFP. These chips have similar specifications and can be used as alternatives in various applications. -
Features
The FDS86252 is a dual N-Channel PowerTrench® MOSFET with a low on-resistance and high current rating. It is capable of efficient switching, making it suitable for use in power management circuits and battery protection systems. It features a compact and surface-mountable SO-8 package for ease of use and integration. -
Pinout
The FDS86252 is a dual N-channel PowerTrench MOSFET with a 6-pin SOT-23 package. Its pins include the source (S), gate (G), and drain (D) for each of the two MOSFETs. It is primarily used for switching applications in power management and load switching circuits. -
Manufacturer
The manufacturer of the FDS86252 is Fairchild Semiconductor Corporation. It is a global company that designs, manufactures, and markets semiconductor devices used in various applications such as automotive, consumer electronics, computing, industrial, and telecommunications. -
Application Field
The FDS86252 is a dual N-channel PowerTrench® MOSFET suitable for a wide range of applications, including power management, battery charging, motor control, and solid-state relays. It offers low on-resistance, fast switching capabilities, and high thermal performance, making it ideal for various high-frequency switching applications in automotive, industrial, and consumer electronics. -
Package
The FDS86252 chip is a surface mount package with an SO-8 (Small Outline) form factor. Its size is 5.00mm x 6.2mm x 1.75mm.
Ficha de dados PDF
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