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ON FDS6612A
N-Channel 30 V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDS6612A
Ficha de dados: FDS6612A Datasheet (PDF)
Pacote/Caso: SOIC-8
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2188 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFDS6612A Descrição geral
This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Características
- 8.4 A, 30 V
- RDS(ON) = 22 mΩ @ VGS = 10 V
- RDS(ON) = 30 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Aplicativo
- This product is general usage and suitable for many different applications.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Source Content uid | FDS6612A | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | SOP-8 | Manufacturer Package Code | 751EB |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 | Factory Lead Time | 4 Weeks |
| Samacsys Manufacturer | onsemi | Additional Feature | LOGIC LEVEL COMPATIBLE |
| Application | SWITCHING | Configuration | SINGLE WITH BUILT-IN DIODE |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | TMOS | |
| feature-configuration | Single Quad Drain Triple Source | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 30 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 8.4 | |
| feature-maximum-drain-source-resistance-mohm | 22@10V | feature-typical-gate-charge-vgs-nc | 5.4@5V |
| feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 560@15V | |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 2500 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 8 | feature-supplier-package | SOIC |
| feature-standard-package-name1 | SO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | No |
| feature-svhc-exceeds-threshold | No |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDS6612A chip is a power MOSFET transistor designed for low voltage applications. It has a low on-resistance and is capable of handling high currents. The chip can be used in various electronic devices where efficient power switching is required, such as power management circuits, motor control, and battery protection circuits.
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Equivalent
There are no direct equivalent products to the FDS6612A chip. However, some possible alternatives that offer similar functionality include the IRLML2402, IRLML6401, and IRLML6402 chips. It is recommended to consult the datasheets of these chips to determine if they meet the specific requirements of your application. -
Features
The FDS6612A is a small signal N-channel MOSFET transistor. It has a low on-resistance of 2.6 ohms and a maximum drain current of 3.7A. The device is designed for applications where low voltage, high speed, and low power dissipation are important factors. -
Pinout
The FDS6612A is a dual N-channel PowerTrench MOSFET with a pin count of 8. The pins serve the following functions: pin 1 is the drain of MOSFET 1, pin 2 is the gate of MOSFET 1, pin 3 is the source of MOSFET 1, pin 4 is the gate of MOSFET 2, pin 5 is the drain of MOSFET 2, pin 6 is the source of MOSFET 2, pin 7 is connected internally, and pin 8 is the exposed thermal pad. -
Manufacturer
The manufacturer of the FDS6612A is Fairchild Semiconductor. It is an American company that specializes in the design, development, and production of a wide range of semiconductor devices. -
Application Field
The FDS6612A is a power MOSFET transistor designed for use in low voltage applications such as battery chargers, power management circuits, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for various applications where efficient power handling is required. -
Package
The FDS6612A chip has a small outline package (SOP) type, with a form of surface mount equipment (SMT). It has a size of 8 pins.
Ficha de dados PDF
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