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ON FQB5N90TM
N-Channel 900 V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount TO-263 (D2PAK)
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FQB5N90TM
Ficha de dados: FQB5N90TM Datasheet (PDF)
Pacote/Caso: TO-263
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 3404 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFQB5N90TM Descrição geral
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Características
- 5.4A, 900V, RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 2.7A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 13pF)
- 100% avalanche tested
- RoHS compliant
Aplicativo
- Lighting
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Source Content uid | FQB5N90TM | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | D2PAK-3 | Manufacturer Package Code | 418AJ |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 51 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 660 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
| Drain Current-Max (ID) | 5.4 A | Drain-source On Resistance-Max | 2.3 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 158 W | Pulsed Drain Current-Max (IDM) | 21.6 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | DMOS | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 900 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
| feature-maximum-continuous-drain-current-a | 5.4 | feature-maximum-drain-source-resistance-mohm | 2300@10V |
| feature-typical-gate-charge-vgs-nc | 31@10V | feature-typical-gate-charge-10v-nc | 31 |
| feature-typical-input-capacitance-vds-pf | 1200@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 3130 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | D2PAK | feature-standard-package-name1 | TO-263 |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa3 :Saco antiestático
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Etapa5 :Caixas de embalagem
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FQB5N90TM chip is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It offers a low on-resistance, allowing efficient power handling, and has high reliability and robustness. The chip's advanced features and performance make it suitable for applications such as power supplies, motor control, and audio amplification.
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Features
The FQB5N90TM is a power MOSFET transistor with a drain-source voltage rating of 900V and a continuous drain current of 5A. It has a low gate charge and high switching speed, making it suitable for high-frequency applications. The transistor also has a low on-resistance and low capacitance, enabling efficient power management. -
Pinout
The FQB5N90TM is a MOSFET transistor with 3 pins. The pin-out configuration is Gate (G), Drain (D), and Source (S). The Gate pin is used to control the flow of current between the Drain and Source pins. -
Manufacturer
The manufacturer of the FQB5N90TM is Fairchild Semiconductor. It is a semiconductor company that designs, manufactures, and markets a wide range of power semiconductors, discrete semiconductors, and integrated circuits. -
Application Field
The FQB5N90TM is a power MOSFET transistor commonly used in high-voltage applications such as switch-mode power supplies, motor control, and lighting. Its high voltage rating and low on-state resistance make it suitable for various power conversion and control circuits that require efficient and reliable operation. -
Package
The FQB5N90TM chip is available in a TO-263 package type, commonly known as a D2PAK form. Its dimensions or size fall within the standard specifications for a TO-263 package, measuring approximately 10.28mm x 15.27mm x 4.57mm.
Ficha de dados PDF
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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365 dias de garantia de qualidade para todos os produtos
The pricing is highly competitive for such high-quality electronic components.