ON FDS89161
Mosfet Array 100V 2.7A 1.6W Surface Mount 8-SOIC
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDS89161
Ficha de dados: FDS89161 Datasheet (PDF)
Pacote/Caso: SO-8
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2763 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFDS89161 Descrição geral
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Características
- Shielded Gate MOSFET Technology
- Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A
- Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
Aplicativo
- This product is general usage and suitable for many different applications.
- Synchronous Rectifier
- Primary Switch for Bridge Topology
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Source Content uid | FDS89161 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | SOP-8 | Manufacturer Package Code | 751EB |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 24 Weeks | Samacsys Manufacturer | onsemi |
Application | SWITCHING | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Dual Dual Drain | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 2.7 | |
feature-maximum-drain-source-resistance-mohm | 105@10V | feature-typical-gate-charge-vgs-nc | 3@10V|1.7@5V |
feature-typical-gate-charge-10v-nc | 3 | feature-typical-input-capacitance-vds-pf | 158@50V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 1600 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 8 | feature-supplier-package | SOIC |
feature-standard-package-name1 | SO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDS89161 chip is a high-performance integrated circuit designed for use in various electronic devices. It offers advanced features such as low power consumption, high-speed data processing, and compatibility with different communication protocols. The chip's versatility and efficiency make it suitable for applications in areas like consumer electronics, automotive systems, and industrial control.
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Features
The FDS89161 is a semiconductor device designed for power management solutions. It features a low on-resistance, allowing for efficient power delivery. It also has a low gate charge, making it suitable for fast switching applications. Additionally, it offers a small package size, enabling space-saving designs. -
Pinout
The FDS89161 is a dual N-channel PowerTrench MOSFET with a pin count of 8. Its functions include providing low on-resistance and high-speed switching capabilities in applications such as power management circuits, motor drives, and load switches. -
Manufacturer
The manufacturer of the FDS89161 is Fairchild Semiconductor. Fairchild Semiconductor is a global company that designs, develops, and manufactures semiconductor products. They specialize in power and signal path products for various applications in automotive, industrial, and consumer markets. -
Application Field
The FDS89161 is a high-voltage power MOSFET designed for applications requiring efficient power switching in a small yet robust package. With a high drain-source breakdown voltage and low on-resistance, it is commonly used in a variety of applications such as motor control, power supplies, LED lighting, and battery charging circuits. -
Package
The FDS89161 chip is available in a package type of QFN (Quad Flat No-Lead), with a form factor of 6x6mm and a size of 36 mm².
Ficha de dados PDF
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