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BSM300GA120DN2
Transistor Module for IGBT Transistor with N-Channel, 62MM-2 Tray
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Infineon
Parte do fabricante #: BSM300GA120DN2
Ficha de dados: BSM300GA120DN2 Ficha de dados (PDF)
Pacote/Caso: 62 mm
Status RoHS:
Condição de estoque: 6.378 peças, novo original
Tipo de Produto: IGBT Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $425,008 | $425,008 |
200 | $164,472 | $32894,400 |
500 | $158,692 | $79346,000 |
1000 | $155,836 | $155836,000 |
Em estoque: 6.378 PCS
BSM300GA120DN2 Descrição geral
Infineon's BSM300GA120DN2 power semiconductor module is characterized by its compact and lightweight design, making it easy to integrate into existing systems. Its low switching losses and high efficiency contribute to overall system performance and energy efficiency, while its long lifespan and high reliability reduce maintenance requirements and downtime. With a dual IGBT module, 300A current rating, and 1200V voltage rating, this module is well-suited for electric vehicle drives, industrial drives, and renewable energy systems, offering exceptional power handling capabilities. The advanced thermal management system ensures efficient heat dissipation, enabling reliable operation even in demanding operating conditions, while built-in overcurrent and overtemperature protection circuits provide additional security for the module and the system
![BSM300GA120DN2 BSM300GA120DN2](/files/uploads/product/b/ef0b30851bfd4ee0b889cbb15c898357.webp)
Características
- High power density for high efficiency applications
- Wide operating temperature range from -40°C to 125°C
- High surge current capability for safe operation
- Suitable for renewable energy systems, industrial drives, and power supplies
Aplicativo
- Efficient energy solutions
- Reliable power systems
- Advanced technology uses
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 430 A | Gate-Emitter Leakage Current | 320 nA |
Pd - Power Dissipation | 2.5 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100730 BSM300GA120DN2HOSA1 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The BSM300GA120DN2 is a power module chip used for high-power applications. It is designed for efficient energy conversion in various industries, including industrial, renewable energy, and transportation. The chip offers high power density, reliable performance, and advanced protection features. It is suitable for applications such as motor drives, inverters, and electric vehicle systems.
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Equivalent
Some equivalent products of the BSM300GA120DN2 chip are the SEMIKRON SEMITRANS 3 series modules and the Infineon IGBT modules of the 1EDI series, such as the FF200R12KE3 and FF300R12KE3. -
Features
The BSM300GA120DN2 is a silicon carbide power module designed for high-power applications. Key features include a voltage rating of 1200V, a current rating of 300A, low on-state resistance, high switching frequency, robust and reliable design, and integrated temperature and current sensors for precise control and protection. -
Pinout
The BSM300GA120DN2 is an IGBT power module, specifically used in three-phase inverters. It has 7 pins, including gate-emitter and collector-emitter pins for each of its 3 IGBTs. The module is designed to convert direct current (DC) into alternating current (AC) in a variety of applications, such as motor drives and industrial equipment. -
Manufacturer
Infineon Technologies AG is the manufacturer of the BSM300GA120DN2. It is a German semiconductor manufacturer that specializes in manufacturing power semiconductors, microcontrollers, and integrated circuits for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The BSM300GA120DN2 is a semiconductor device that can be used in various application areas, including renewable energy systems such as wind turbines and solar power, electric vehicle charging stations, industrial automation and robotics, and power supplies for data centers. -
Package
The BSM300GA120DN2 chip has a package type of Power Module, a form of Non-insulated, and a size of 42mm x 150mm.
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
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Temos produtos ricos que podem atender às suas diversas necessidades.
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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