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62 mm
(23 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| BSM300GA120DN2 | Transistor Module for IGBT Transistor with N-Channel, 62MM-2 Tray | Infineon | 6.378 | Add to BOM |
| BSM400GA170DLC | High-power IGBT module capable of 400A and 1700V | Infineon | 8.424 | Add to BOM |
| BSM200GB120DLC | Packaged in 7-Pin Tray for Convenience | Infineon | 9.169 | Add to BOM |
| FF300R12KT3 | Two IGBT modules in one package with 1200V and 300A ratings | Infineon | 7.937 | Add to BOM |
| BSM200GA170DLC | The BSM200GA170DLC Insulated Gate Bipolar Transistor features 400A I(C) and 1700V V(BR)CES in an N-Channel configuration | EUPEC GMBH & CO KG | 8.024 | Add to BOM |
| BSM300GA120DLC | 570A I(C) INSULATED GATE BIPOLAR TRANSISTOR | EUPEC GMBH & CO KG | 6.290 | Add to BOM |
| BSM150GB170DN2 | Dual IGBT Modules Rated at 1700 Volts and 150 Amperes | Infineon | 9.458 | Add to BOM |
| BSM150GB170DLC | High-power Insulated Gate Bipolar Transistor | Infineon Technologies Corporation | 2.649 | Add to BOM |
| FZ400R12KE3B1 | max current rating ensures robust performance in challenging environment | Infineon | 9.458 | Add to BOM |
| FF450R12KE4 | N-Channel 1.2KV, 520A power conversion and control solutions | Infineon | 6.483 | Add to BOM |
| FF150R17KE4 | Powerful IGBT module for high-performance applications, rated for and kV | Infineon | 9.458 | Add to BOM |
| FZ600R12KS4 | Experience enhanced performance and reliability in demanding power management scenarios | Infineon | 9.458 | Add to BOM |
| FF450R12KT4 | Compact and reliable IGBT module for demanding motor drive | Infineon | 3.805 | Add to BOM |
| DZ800S17K3 | Rectifier Diode with 1.7KV Voltage and 800A Current Rating | Infineon | 9.458 | Add to BOM |
| BSM300GAL120DLC | IGBT Modules 1200V 300A CHOPPER | Infineon | 9.458 | Add to BOM |
| BSM300GA120DN2S | BSM300GA120DN2S: A powerful Insulated Gate Bipolar Transistor capable of handling currents up to 430A and voltages of 1200V | Infineon | 6.164 | Add to BOM |
| BSM200GA170DN2 | BSM200GA170DN2 is an insulated gate bipolar transistor module designed for high-power applications, featuring a nominal voltage of 1 | Infineon | 6.100 | Add to BOM |
| BSM300GA170DN2 | High-power N-channel transistor for efficient and reliable application | Infineon | 2.299 | Add to BOM |
| BSM300GB120DLC | Compact mm package size makes it ideal for space-constrained design | Infineon | 2.010 | Add to BOM |
| FF400R12KE3 | A maximum current capacity and ,V operating voltag | Infineon | 4.072 | Add to BOM |
| FF300R12KS4 | Advanced IGBT technology enables efficient energy conversion with low losses and high switching frequencie | Infineon | 3.109 | Add to BOM |
| FF200R12KS4 | Compact design minimizes installation space requirement | Infineon | 3.245 | Add to BOM |
| BSM200GA120DLC | Reliable and efficient DC-DC conversion up t | Infineon | 7.017 | Add to BOM |
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