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FBGA
(765 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT41K1G16DGA-125:A | DRAM DDR3 16G 1GX16 FBGA DDP | Micron Technology | 6.554 | Add to BOM |
| SDIN7DP2-4G | Boasting superior processing power, this industrial-grade NAND flash memory chip is built to withstand demanding applications | Sandisk | 9.458 | Add to BOM |
| MT47H128M16HG-3IT:A | Enhanced data storage capabilities | Micron Technology | 9.795 | Add to BOM |
| MT47H32M16HR-3IT:F | Only for OEMs and CMs | Micron Technology | 6.554 | Add to BOM |
| K4G80325FB-HC25 | Next-Generation DDRSDRAM for Fast Computin | Samsung | 6.554 | Add to BOM |
| K4B4G1646D-BCMA | This chip stores data efficientl | Samsung Electro-Mechanics | 6.297 | Add to BOM |
| K4B4G1646D-BCK0 | 256Mx16 1.5V 90-Pin FBGA | Samsung Electronics | 4.101 | Add to BOM |
| K4A8G165WC-BCRC | FBGA-96 DDR SDRAM ROHS K4A8G165WC-BCRC | Samsung Electronics | 115 | Add to BOM |
| MT53E1G16D1FW-046 AAT:A | Robust AEC-Q100 compliance ensures flawless operation in harsh environments | Micron | 486 | Add to BOM |
| MT46H16M16LFBF-6IT:H | High-performance memory solution for demanding applications | Micron Technology | 6.554 | Add to BOM |
| K4A8G085WB-BCRC | High-Speed Memory Solution for Demanding Systems | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4B4G1646E-BCNB | Operating with a speed of 0.255 nanoseconds | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4A8G165WB-BIRC | Enjoy exceptional performance and energy efficiency with our ROHS-compliant K4A8G165WB-BIRC module, perfect for modern computing demands | Samsung | 6.554 | Add to BOM |
| H5AN8G6NCJR-VKC | DDR DRAM, | SK HYNIX INC | 6.554 | Add to BOM |
| K4T51163QJ-BCE7 | K4T51163QJ-BCE7 SAMSUNG | SAMSUNG | 6.554 | Add to BOM |
| NT5CB128M16HP-CG | DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 | NANYA TECHNOLOGY CORP | 6.554 | Add to BOM |
| PC28F128J3D-75 | NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 75ns 64-Pin EZBGA Tray | Intel Corp | 3.073 | Add to BOM |
| K6R4016V1D-EI10 | SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 48-Pin TBGA | SAMSUNG | 6.554 | Add to BOM |
| MT47H64M16HR-3 AAT:H | 84FBGA DDR2 SDRAM 1GBIT 3NS IC | MICRON | 1 | Add to BOM |
| NT5AD256M16D4-HRI | High-density DDR4 SDRAM chip with 4Gbit capacity and 256Mx16 configuration | Nanya Technology | 200 | Add to BOM |
| K4E6E304EB-EGCF | The DRAM chip is designed for mobile devices, offering high performance and energy efficiency with its 178-pin FBGA package." | Samsung Electronics | 6.788 | Add to BOM |
| KLM8G1GETF-B041006 | KLM8G1GETF-B041006" is a high capacity memory module designed for efficient data storage and retrieval | Samsung Electronics | 7.500 | Add to BOM |
| NT6AN512T32AV-J2 | LPDDR4 SDRAM designed for commercial mobile applications | Nanya Technology | 8.162 | Add to BOM |
| MT40A1G16KD-062E IT:E | MT40A1G16KD-062E IT:E is a high-performance DDR4 DRAM module with a capacity of 16Gb | Micron Technology | 7.607 | Add to BOM |
| M1A3PE1500-2FGG676 | ProASIC3E Field Programmable Gate Array (FPGA) IC 444 276480 676-BGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| MT41K512M16HA-125 AIT:A | Key features: High-density memory, low voltage operation, reliable performance in automotive applications | Micron Technology | 6.554 | Add to BOM |
| A3PE3000L-1FG484I | ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA | MICROCHIP TECHNOLOGY INC | 6.585 | Add to BOM |
| A3PE3000L-FG484 | ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| M1A3PE1500-2FG484I | FPGA - Field Programmable Gate Array M1A3PE1500-2FG484I | MICROCHIP TECHNOLOGY INC | 9.957 | Add to BOM |
| H5TQ4G63CFR-RDC | Experienced distributor specializing in French electronics | Sk Hynix | 5.267 | Add to BOM |
| MT47H32M16HR-25E IT:G TR | The MT47H32M16HR-25E IT:G TR's high-speed operation and large storage capacity make it an excellent choice for demanding computing environments | Micron Technology | 9.593 | Add to BOM |
| MT47H32M16HR-25E:G | Reliable and efficient DDR DRAM solution for high-speed data transfer and storage in servers, workstations, and PC | Micron Technology | 5.721 | Add to BOM |
| MT42L128M32D1GU-25 WT:A | 4Gbit 128Mx32 1.8V 134-Pin FBGA DRAM Chip Mobile LPDDR2 SDRAM | Micron Technology | 5.578 | Add to BOM |
| MT42L128M32D1LF-25 WT:A | High-density Integrated Circuit | Micron Technology | 7.200 | Add to BOM |
| AGL1000V5-FGG256I | FPGA - Field Programmable Gate Array IGLOO FPGA, 11KLEs | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| A3PE3000L-1FG484M | ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| A3PE3000L-FG484M | FPGA with 75264 CLBs | MICROCHIP TECHNOLOGY INC | 9.668 | Add to BOM |
| A3PE3000-2FG484I | ProASIC3E Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| A3PE3000-FGG484I | ProASIC3E Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| AC82PM45 SLB97 | Effortless energy savings for on-the-go | Intel Corporation | 6.554 | Add to BOM |
| KLMCG4JETD-B041 | Packaged in a 153-pin FBGA form factor | Samsung Electronics | 3.356 | Add to BOM |
| K4T1G084QJ-BCE7 | With its advanced technology and compact design, the KJ-BCEDDR SDRAM ROHS memory module is perfect for modern device | Samsung Electronics | 5.811 | Add to BOM |
| K3QF3F30BM-FGCF | DRAM chip for mobile devices LPDDR3 SDRAM | Samsung Electronics | 5.315 | Add to BOM |
| K4T51163QI-HCE6 | No brokers or intermediaries allowed | Samsung Electronics | 5.962 | Add to BOM |
| K4B4G1646B-HCK0 | Lead-free memory chip | Samsung Electronics | 9.288 | Add to BOM |
| NT6AN256T32AV-J2 | Mobile LPDDR4 8 Gigabytes (Dual Data Rate) Synchronous Dynamic Random Access Memory | Nanya Technology | 6.554 | Add to BOM |
| K4F8E304HB-MGCJ | Cutting-edge technology for improved efficiency | Samsung Electronics | 2.167 | Add to BOM |
| K4B2G1646F-BCNB | FBGA-96 DDR SDRAM ROHS, product code: K4B2G1646F-BCNB | Samsung Electronics | 6.554 | Add to BOM |
| K4A8G165WB-BCRC | Description: DDR Synchronous Dynamic Random-Access Memory (SDRAM) compliant with RoHS standards | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4UBE3D4AA-MGCL | Upgrade your system with reliable K4UBE3D4AA-MGCL module | Samsung Electro-Mechanics | 6.554 | Add to BOM |
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