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$5000K4T51163QJ-BCE7
K4T51163QJ-BCE7 SAMSUNG
Marcas: SAMSUNG
Parte do fabricante #: K4T51163QJ-BCE7
Ficha de dados: K4T51163QJ-BCE7 Ficha de dados (PDF)
Pacote/Caso: FBGA
Tipo de Produto: Memória
Status RoHS:
Condição de estoque: 6.554 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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K4T51163QJ-BCE7 Descrição geral
32M X 16 DDR DRAM, 0.4 ns, PBGA84
Características
JEDEC standard 1.8V0.1V Power Supply
VDDQ = 1.8V0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
-PASR(Partial Array Self Refresh)
-50ohm ODT
-High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < T CASE < 95 C
All of Lead-free products are compliant for RoHS
Aplicativo
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| EU RoHS | Compliant | ECCN (US) | EAR99 |
| Part Status | Active | HTS | 8541.29.00.95 |
| Automotive | No | PPAP | No |
| Category | Power MOSFET | Configuration | Single |
| Channel Mode | Enhancement | Channel Type | P |
| Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 | Maximum Continuous Drain Current (A) | 9 |
| Maximum Gate Source Leakage Current (nA) | 100 | Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 240@10V | Typical Gate Charge @ Vgs (nC) | 17.5@10V|[email protected] |
| Typical Gate Charge @ 10V (nC) | 17.5 | Typical Gate to Drain Charge (nC) | 3.2 |
| Typical Gate to Source Charge (nC) | 2.8 | Typical Reverse Recovery Charge (nC) | 24.5 |
| Typical Input Capacitance @ Vds (pF) | 1239@25V | Typical Reverse Transfer Capacitance @ Vds (pF) | 28@25V |
| Minimum Gate Threshold Voltage (V) | 1 | Typical Output Capacitance (pF) | 42 |
| Maximum Power Dissipation (mW) | 42000 | Typical Fall Time (ns) | 34.4 |
| Typical Rise Time (ns) | 14.9 | Typical Turn-Off Delay Time (ns) | 57.4 |
| Typical Turn-On Delay Time (ns) | 9.1 | Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 | Supplier Temperature Grade | Automotive |
| Packaging | Tape and Reel | Maximum Power Dissipation on PCB @ TC=25°C (W) | 42 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 15 | Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 44 |
| Typical Diode Forward Voltage (V) | 0.7 | Typical Gate Plateau Voltage (V) | 3.1 |
| Typical Reverse Recovery Time (ns) | 25.2 | Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate Source Voltage (V) | 20 | Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
| Mounting | Surface Mount | Package Height | 2.29 |
| Package Width | 6.1 | Package Length | 6.58 |
| PCB changed | 2 | Tab | Tab |
| Standard Package Name | TO-252 | Supplier Package | DPAK |
| Pin Count | 3 |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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![Embalagem a vácuo]( "Embalagem a vácuo")
Etapa2 :Embalagem a vácuo
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![Saco antiestático]( "Saco antiestático")
Etapa3 :Saco antiestático
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![Embalagem individual]( "Embalagem individual")
Etapa4 :Embalagem individual
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![Caixas de embalagem]( "Caixas de embalagem")
Etapa5 :Caixas de embalagem
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![etiqueta de envio com código de barras]( "etiqueta de envio com código de barras")
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The K4T51163QJ-BCE7 chip is a high-performance dynamic random-access memory (DRAM) chip. It is designed to provide fast and efficient data storage and retrieval in various electronic devices such as computers, servers, and mobile devices. Its advanced technology and capacity make it suitable for demanding applications that require high-speed and reliable memory performance.
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Equivalent
The equivalent products of the K4T51163QJ-BCE7 chip are the MT41K512M8RH-107:E, MT41K512M16HA-107:E, and MT41K512M16HA-125:E chips. -
Features
The key features of K4T51163QJ-BCE7 include its capacity of 4GB, DDR3L SDRAM technology, operating voltage range of 1.35V, and a clock frequency of 1600MHz. It is a low-voltage, high-speed memory module suitable for various applications, such as laptops, desktops, and embedded systems. -
Pinout
The K4T51163QJ-BCE7 is a DDR3L SDRAM with a pin count of 96. It is commonly used in computer memory modules and offers a capacity of 8 gigabits (1 gigabyte). It operates at a voltage of 1.35V, making it suitable for low-power applications. -
Manufacturer
Samsung is the manufacturer of the K4T51163QJ-BCE7. It is a multinational conglomerate company, specializing in various sectors such as electronics, shipbuilding, construction, and more. -
Application Field
The K4T51163QJ-BCE7 is a dynamic random-access memory (DRAM) chip commonly used in various applications, including computers, servers, laptops, and gaming consoles. It provides high-speed data storage and retrieval for these devices, thereby enhancing their performance and overall functionality. -
Package
The K4T51163QJ-BCE7 chip is in an FBGA package type. It has a 78-ball form and measures approximately 8mm by 10mm in size.
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A quantidade mínima de pedido começa em 1 unidade.
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