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FBGA
(765 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT47H64M16HR-3:G | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray | Micron Technology | 5.494 | Add to BOM |
| MT47H64M16HR-25E:G | The MT47H64M16HR-25E:G is a CMOS DDR DRAM housed in a PBGA84 package measuring 8 by 12.50 millimeters | Micron Technology | 8.472 | Add to BOM |
| MT47H32M16HR-25E:F | Cutting-edge memory module offering ultra-fast data processing | Micron Technology | 7.910 | Add to BOM |
| MT47H128M8HQ-3:E | High-performance memory solution for demanding applications | Micron Technology | 7.649 | Add to BOM |
| MT46V16M16CY-6 IT:K | 256Mbit 16Mx16 DRAM Chip | Micron Technology | 8.042 | Add to BOM |
| MT46V16M16CY-5B:K | 256Mbit DDR SDRAM Chip | Micron Technology | 8.352 | Add to BOM |
| MT41J64M16LA-187E:B | DDR3 SDRAM 1Gbit DRAM Chip | Micron Technology | 9.462 | Add to BOM |
| MT41J64M16LA-15E:B | 15E:B model is a high-speed DDR DRAM module | Micron Technology | 7.757 | Add to BOM |
| MT41J128M16HA-15EIT:D | Upgrade your system's memory capabilities with this advanced DDR3 SDRAM chip | Micron Technology | 9.390 | Add to BOM |
| K4X51163PK-FGD8 | DDR1 Mobile DRAM 32MX16 CMOS PBGA60 | Samsung Electronics | 6.690 | Add to BOM |
| K4T51163QI-HCE6000 | Industry-standard FBGA Package Technology | Samsung Electronics | 9.487 | Add to BOM |
| K4T1G164QG-BCE7000 | 1.8V 84-Pin FBGA Memory Module | Samsung Electronics | 6.608 | Add to BOM |
| K4B4G0846B-HYK0 | 78-pin FBGA package with 512Mx8 configuration | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4B2G1646Q-BCK0000 | This memory chip offers reliable performance and efficiency for various computing applications." | Samsung Electronics | 6.554 | Add to BOM |
| K4B2G1646E-BCK0 | The chip is housed in a 96-pin FBGA package, making it suitable for compact electronic devices | Samsung Electronics | 5.481 | Add to BOM |
| K4B2G1646C-HCH9000 | SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA | SAMSUNG | 6.554 | Add to BOM |
| K4B2G0846Q-BCK0 | 256Mx8 Configuration | Samsung Electronics | 6.415 | Add to BOM |
| K4B2G0846D-HCH9 | DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin FBGA | Samsung Electronics | 7.143 | Add to BOM |
| MX69GL642EEXGI-70G | Integration of Non-Volatile Memory and Static RAM for High Performance | Macronix | 9.880 | Add to BOM |
| THGAF9T0L8LBAB8 | Automotive AEC-Q100 NAND Flash 3.3V 1T-bit 153-Pin FBGA | KIOXIA | 8.297 | Add to BOM |
| KLM8G1GESD-B03Q | 8GB Memory Card | Samsung Electronics | 7.527 | Add to BOM |
| NT6CL256M32AM-H1 | Mobile LPDDR3 8Gb(SDP) SDRAM for Commercial Use | Nanya Technology | 9.986 | Add to BOM |
| K4B2G0846D-HYK0 | Highly efficient DDR3L SDRAM chip offering 2Gbit of memory capacity in a compact 78-Pin FBGA package" | Samsung Electronics | 9.387 | Add to BOM |
| K4B4G1646B-HCMA | Experience faster data transfer rates and improved system responsiveness with K | Samsung Electronics | 6.554 | Add to BOM |
| K4B2G1646F-BCMA | Experience seamless multitasking and improved system responsiveness with this advanced DDR3 SDRAM chip." | Samsung Electronics | 9.116 | Add to BOM |
| S3C2410A20-Y080 | S3C2410A20-Y080 | Samsung Electronics | 7.665 | Add to BOM |
| NT6CL256T32BM-H2 | This versatile DRAM chip operates at both 1.8V and 1.2V, providing efficient and flexible power management options | Nanya Technology | 6.540 | Add to BOM |
| NT6CL128M32BM-H2 | High performance LPDDR3 SDRAM for mobile devices | Nanya Technology | 5.002 | Add to BOM |
| NM1482KSLAXCL-3B | Superior reliability and scalability for mission-critical systems | Nanya Technology | 9.640 | Add to BOM |
| MTFC4GLDEA-0MWT | Flash memory chip | Micron Technology | 6.554 | Add to BOM |
| KLMCG4JEUD-B04Q | High-performance storage solution for demanding applications | Samsung Electronics | 5.054 | Add to BOM |
| KLM8G1GESD-B04Q | Fast and efficient data transfer enabled by this B eMMC module with a high-speed interface, perfect for use in AI-powered devices and IoT system | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4T51163QN-BCE7 | Low-voltage operation at 1.8V | Samsung Electronics | 8.361 | Add to BOM |
| K4G41325FE-HC25 | Low voltage operation at 1.35V/1.5V | SAMSUNG | 6.554 | Add to BOM |
| K4F6E3D4HB-MHCJ | Item: K4F6E3D4HB-MHCJ, FBGA-200 DRAM ROHS | Samsung Electronics | 6.554 | Add to BOM |
| K4F6E304HB-MGCH | This product is a high-density DRAM chip designed for mobile devices, offering 16Gbit of memory with a 512Mx32 configuration | Samsung Electronics | 6.271 | Add to BOM |
| K4E8E324EB-AGCF | Mobile LPDDR3 SDRAM 8Gbit 256Mx32 DRAM Chip | Samsung Electronics | 7.941 | Add to BOM |
| K4B4G0846E-BCNB | FBGA-78 DDR SDRAM ROHS: This product is a FBGA-78 DDR SDRAM that is RoHS compliant | Samsung Electronics | 5.457 | Add to BOM |
| K4B1G1646I-BCNB | 96-Pin FBGA DRAM Chip for DDR3 SDRAM with 1.5V power supply | Samsung Electronics | 5.958 | Add to BOM |
| K4A8G165WC-BCTD | High-performance FBGA-96 package for efficient DDR SDRAM operation | Samsung Electronics | 3.784 | Add to BOM |
| K4A8G165WB-BIWE | FBGA-96 DRAM ROHS | Samsung Electronics | 8.798 | Add to BOM |
| K4A4G165WE-BIWE | Product description: K4A4G165WE-BIWE, 4Gb E-die DDR4 SDRAM | Samsung Electronics | 9.980 | Add to BOM |
| K4A4G165WE-BIRC | ROHS DRAM, FBGA-96 | SAMSUNG | 6.212 | Add to BOM |
| K4A4G085WE-BIRC | Small FBGA package | SAMSUNG | 6.554 | Add to BOM |
| K4A4G085WE-BCTD | RoHS FBGA-78 DRAM | Samsung Electronics | 9.831 | Add to BOM |
| K3RG3G30MM-MGCH | Next-Generation M-Die Low Power DDR4 DRAM Offering 24GB Density | Samsung Electronics | 7.348 | Add to BOM |
| PM8054B-F3EI | SXP 36x12G I/O Expanders Interface | Microchip Technology, Inc | 2.405 | Add to BOM |
| MT53E512M32D1ZW-046 WT:B | LPDDR4 DRAM, 128MX32, CMOS, PBGA200 | Micron Technology | 6.554 | Add to BOM |
| MT35XU512ABA1G12-0AAT | NOR Flash Serial-SPI 1.8V 512M-bit 512M/64M x 1/8-bit Automotive 24-Pin TBGA Tray | MICRON | 6.684 | Add to BOM |
| MT53B512M32D2NP-062 AIT:C | DRAM LPDDR4 16G 512MX32 FBGA DDP | Micron Technology | 8.210 | Add to BOM |
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