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FBGA
(765 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT47H64M16BT-3 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA92 | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| MT47H128M8 | DDR2SDRAM | MT | 6.554 | Add to BOM |
| MTA72ASS8G72LZ-2G6D2 | DRAM Module DDR4 SDRAM 64Gbyte 288LRDIMM Tray | Micron Technology | 6.554 | Add to BOM |
| MTA18ASF2G72PDZ-2G3B1 | DRAM Module DDR4 SDRAM 16Gbyte 288RDIMM Tray | Micron Technology | 6.554 | Add to BOM |
| SDED5-001G-NAT | Embedded Flash Drive | Western Digital | 9.376 | Add to BOM |
| MD8832-D1G-V3-X-P | Western Digital | 8.577 | Add to BOM | |
| 25P64V6G | Micron Technology Inc. | 6.554 | Add to BOM | |
| ST3222EB | 15 KV ESD PROTECTED 3 TO 5.5V, LOW POWER, UP TO 250KBPS RS-232 DRIVERS AND RECEIVERS, [-40oC, 85oC] TEMPERATURE RANGE | STMicroelectronics, Inc | 3.456 | Add to BOM |
| XQR4VFX60-10CF1144V | Field Programmable Gate Array, 6656 CLBs, 1028MHz, 56880-Cell, CMOS, CBGA1144, CERAMIC, CGA-1144 | XILINX INC | 6.554 | Add to BOM |
| CY7C1480BV25-250BZI | SRAM Chip Sync Quad 2.5V 72M-bit 2M x 36 3ns 165-Pin FBGA Tray | Infineon Technologies Corporation | 2.466 | Add to BOM |
| HMP351U6AFR8C-S6 | DDR DRAM Module, 512MX64, 0.4ns, CMOS, ROHS COMPLIANT, UBDIMM-240 | SK HYNIX INC | 6.554 | Add to BOM |
| MT40A4G8NEA-062E:F | DRAM DDR4 32G 4GX8 FBGA DDP | MICRON TECHNOLOGY INC | 500 | Add to BOM |
| K3QF1F10EM-AGCE | Mobile DRAM Stack Memory | SAMSUNG | 6.554 | Add to BOM |
| MTFC16GJGDQ-AIT:Z | eMMC MLC EMMC 128G | Micron Technology | 6.554 | Add to BOM |
| K4G20325FC-HC04 | DRAM Chip GDDR5 SDRAM 2Gbit 64Mx32 170-Pin FBGA | SAMSUNG | 6.554 | Add to BOM |
| K4B1G1646G-BCF8 | DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA | SAMSUNG | 6.554 | Add to BOM |
| H5MS1G62AFR-J3M | DRAM Chip Mobile-DDR SDRAM 1Gbit 64Mx16 1.8V 60-Pin FBGA | SKHYNIX | 6.554 | Add to BOM |
| H5GQ2H24AFR-R0C | DRAM Chip GDDR5 SDRAM 2Gbit 64Mx32 1.5V | SK Hynix | 6.554 | Add to BOM |
| KLMBG4GESD-B04P | eMMC 5.1, Flash Memory | SAMSUNG | 6.554 | Add to BOM |
| K3UH5H50MM-NGCJ | 4GByte DDR4 SDRAM Chip | SAMSUNG | 6.554 | Add to BOM |
| H9HCNNNBKUMLHR | Double Data Rate Architecture DDR4 | SKHYNIX | 6.554 | Add to BOM |
| K3QF6F60MM-QGCF | SAMSUNG | 3.675 | Add to BOM | |
| K4E6E304EE-EGCF | SAMSUNG | 3.304 | Add to BOM | |
| ST3485EB | Stratix GX FPGA 25K 8-FBGA | STMicroelectronics, Inc | 2.980 | Add to BOM |
| MT41K1G8SN-107IT:A | Low voltage 1.35V RAM | Micron Technology | 4.671 | Add to BOM |
| MT40A1G16TD-062E AAT:F | High-speed DDR4 technology | Micron Technology | 4.248 | Add to BOM |
| MT47H128M8CF-3 AIT:H | With its rapid data transfer rate of . Mbps, this MTHF-AIT:H is perfect for demanding computing task | Micron Technology | 5.351 | Add to BOM |
| MT40A2G8VA-062E IT:B | Cutting-edge DDR4 memory technology in a compact 2GX8 FBGA form factor by Microchip Technology | Microchip | 3.972 | Add to BOM |
| S3C2412X26-YO80 | With its advanced features and robust design, the S3C2412X26-YO80 is a reliable choice for high-performance computing applications | Samsung Electronics | 5.535 | Add to BOM |
| MT47H64M16BT-5E:A | MT47H64M16BT-5E:A Product Description | Micron Technology | 5.936 | Add to BOM |
| LC5768MV-5FN484C | 225K Gates CPLD ispXPLD 5000MV Family with 768 Macro Cells | Lattice Semiconductor | 7.977 | Add to BOM |
| EPF10K100AFC484-3 | 125MHz frequency | Intel | 5.874 | Add to BOM |
| EPM7512BFC256-7 | Introducing EPM7512BFC256-7: A member of the MAX® 7000B Family, offering 10K Gates and 512 Macro Cells, capable of running at 119MHz, optimized for 2 | Intel | 5.408 | Add to BOM |
| EP20K30EFI144-2X | Comes in a 144-pin FBGA package | Intel | 5.634 | Add to BOM |
| EP20K200EFC672-2 | EP20K200EFC672-2 832 FBGA-672 Programmable Logic Device (CPLDs/FPGAs) ROHS | Intel | 5.941 | Add to BOM |
| AX125-FG324 | FPGA Axcelerator Family 82K Gates 1344 Cells 649MHz 0.15um Technology 1.5V 324-Pin FBGA Tray | Microchip Technology | 8.738 | Add to BOM |
| A3PE600L-FGG484M | ProASIC3EL Field Programmable Gate Array (FPGA) IC 270 110592 484-BGA | Microchip | 9.458 | Add to BOM |
| STI7105DUD | High-definition video processing capabilities | Stmicroelectronics | 3.004 | Add to BOM |
| KLMCG8GEND-B031 | 512 Gigabit Embedded Multimedia Card | Samsung Electronics | 2.111 | Add to BOM |
| EDB4432BBBJ-1D-F-D | Lead-free, compliant with RoHS regulations | Micron Technology | 2.292 | Add to BOM |
| MT41J64M16JT-15EG | Fast and high capacity DDR DRAM with 0.125 nanosecond access time | Micron Technology | 4.882 | Add to BOM |
| MT41J256M16RE-15EIT:D | 16-bit wide data bus enables fast data transfer rates | Micron Technology | 2.624 | Add to BOM |
| K4B4G1646E-BYMA | cutting-edge technology for superior data transfer and storage capabilitie | Samsung Electronics | 5.413 | Add to BOM |
| K4A8G085WB-BCPB | This product complies with RoHS regulations and is environmentally friendly | Samsung Electronics | 4.202 | Add to BOM |
| MT41K256M16TW-107 | Massive capacity and speed for data-intensive system | Micron | 4.490 | Add to BOM |
| LFSCM3GA15EP1-6FN900C | Versatile and adaptable digital processing platfo | Lattice Semiconductor | 2.305 | Add to BOM |
| HC20K1000FC672AB | Printout peak gadget | Intel | 5.880 | Add to BOM |
| APA300-FGG144I | 180MHz operating frequency | Microchip Technology | 9.458 | Add to BOM |
| A3P1000-1FG256T | FPGA - Field Programmable Gate Array Infineon Only | Microchip | 9.458 | Add to BOM |
| A3P1000-FG484T | Automotive, AEC-Q100, ProASIC3 Field Programmable Gate Array (FPGA) IC 300 147456 484-BGA | Microchip | 9.458 | Add to BOM |
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