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FBGA
(765 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT53E512M32D1ZW-046 AAT:B | Reliable memory solution for automotive applications | Micron | 6.554 | Add to BOM |
| K4A4G165WF-BCWE | K4A4G165WF-BCWE: high-performance DDR SDRAM module for industrial applications | Samsung | 6.554 | Add to BOM |
| K4AAG085WA-BCTD | 78-pin FBGA package DDR4 SDRAM chip with low power consumption | Samsung Electronics | 6.361 | Add to BOM |
| K4A8G165WC-BIWE | High-performance memory solution for demanding workloads and environments | Samsung Electronics | 7.299 | Add to BOM |
| K4B4G1646E-BMMA0CV | High-speed data transfer capability enables seamless data exchange between devices, ideal for cloud storage and big data analytic | Samsung Electronics | 8.283 | Add to BOM |
| K4B4G1646E-BYMATCV | Reliable memory solutions | SAMSUNG ELECTRONICS | 6.554 | Add to BOM |
| KLM8G1GETF-B041003 | Reliable chip for secure digital information retention | Samsung Electronics | 8.091 | Add to BOM |
| K4B2G1646F-BMMATCV | Low-Voltage 1.35V/1.5V Technology | SAMSUNG ELECTRONICS | 6.554 | Add to BOM |
| K4A4G165WE-BCWE | 4Gbit DDR4 SDRAM DRAM Chip 256Mx16 1.2V 96-Pin FBGA | Samsung Electronics | 7.905 | Add to BOM |
| MPF300TS-FCG484EES | Optimize system performance and power consumption with this high-performance, highly programmable IC | MICROCHIP TECHNOLOGY | 6.554 | Add to BOM |
| H26M41208HPRQ | Flash Card with 8GB x 8 capacity, PBGA153 | SK Hynix Inc | 6.555 | Add to BOM |
| NT6CL512T32AM-H1 | Small DRAM chip | Nanya Technology | 9.747 | Add to BOM |
| MT61K256M32JE-19G:T | DRAM Chip GDDR6 SGRAM 8Gbit | Micron Technology | 8.089 | Add to BOM |
| THGBMJG6C1LBAB7 | G-bytes Flash Memory Card with e-MMC 153-Pin FBGA - Trays | KIOXIA | 6.152 | Add to BOM |
| THGBMHG6C1LBAB6 | 64GB e-MMC NAND flash for automotive applications | KIOXIA | 7.858 | Add to BOM |
| THGAF9G8L2LBAB7 | FBGA-153 memory device | KIOXIA | 7.780 | Add to BOM |
| AGFB027R24C2E2VR2 | Agilex F Family FPGA with 2692760 Cells and 10nm Technology | Intel | 8.151 | Add to BOM |
| MT51J256M32HF-70:A | Random Access Memory | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| MT60B2G8HB-56B:G | Memory module with 16GB capacity | MICRON TECHNOLOGY INC | 7.866 | Add to BOM |
| MT40A2G8SA-062E:F | 16Gbit DDR4 SDRAM 2Gx8 1.2V Memory Module | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| MT53E1G32D2FW-046 WT:B | High-capacity mobile memory for demanding application | Micron Technology Inc. | 8.332 | Add to BOM |
| MT40A512M16JY-083E IT:B | Premium DDR SDRAM module with exceptional speed, low power consumption, and reliabilit | Micron Technology | 6.887 | Add to BOM |
| MT40A1G8WE-083E IT:B | Robust and Reliable Design for Industrial and Commercial Use | Micron Technology | 9.444 | Add to BOM |
| MT40A512M8RH-083E IT:B | Unlock unparalleled memory capabilities with MT40A512M8RH-083E IT:B | Micron Technology | 9.921 | Add to BOM |
| KLM8G1GEME-B041 | Advanced RoHS-compliant eMMC solution for reliable performance | SAMSUNG | 3.303 | Add to BOM |
| STI7111-BUC | Enjoy breathtaking visuals on your TV with this affordable satellite receiver and decoder combo | stmicroelectronics | 6.233 | Add to BOM |
| S29AL032D90BFI030 | With a fast access time of 90ns, this 32MB NOR Flash memory chip is ideal for applications requiring quick data retrieval and storage | Infineon | 6.554 | Add to BOM |
| MT29F2G08ABDHC:D | The combination of advanced memory technology and reliable manufacturing processes makes this product an excellent choice for data centers | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| MT47H64M16HR-3:E | DDR2 SDRAM Chip - High-density 1Gbit capacity | Micron Technology | 5.491 | Add to BOM |
| MT46H32M32LFCM-6:A | 1.8V 90-Pin VFBGA Tray LPDDR SDRAM DRAM Chip Mobile 1Gbit 32Mx32 | MICRON | 6.554 | Add to BOM |
| MTFC16GJVEC-4M IT | Advanced flash memory device with enhanced security and management capabilities | Micron Technology Inc. | 6.554 | Add to BOM |
| MT41K256M32SLD-125:E | Packaged in a PBGA-136 (plastic ball grid array) and FBGA-136 (fine-pitch ball grid array) | Micron Technology | 6.198 | Add to BOM |
| K4B1G0846G-BCH9 | High-capacity DDR DRAM module with fast access tim | SAMSUNG | 6.909 | Add to BOM |
| K4T51163QG-HCE6000 | High-speed DDR2 SDRAM Memory Chip | Samsung Electronics | 6.554 | Add to BOM |
| K4M56323PI-HG75 | Mobile SDRAM chip with 256Mbit capacity and 1.8V power supply | Samsung Electronics | 6.997 | Add to BOM |
| A3P400-FGG144 | Field Programmable Gate Array A3P400-FGG144 LEAD FREE FPGA | MICROCHIP TECHNOLOGY INC | 6.554 | Add to BOM |
| A3PE600L-FG484M | Field-Programmable Gate Array A3PE600L-FG484M | MICROCHIP TECHNOLOGY INC | 6.499 | Add to BOM |
| PC28F640P33B85 | 85ns/17ns Access Time | Intel Corp | 2.119 | Add to BOM |
| MT40A256M16GE-075E AAT:B | High-speed Memory Module | Micron Technology | 8.986 | Add to BOM |
| 10M50DAF484C6G | High-density programmable logic for diverse applicatio | Intel | 9.492 | Add to BOM |
| K4AAG165WB-MCTD | FBGA-96 DRAM ROHS | Samsung Electronics | 9.597 | Add to BOM |
| K4A8G085WB-BIRC | Upgrade your device with the K4A8G085WB-BIRC FBGA-78 DRAM for improved speed and reliability." | Samsung Electronics | 9.934 | Add to BOM |
| KLM8G1GEND-B031 | Offering exceptional data reliability and endurance | SAMSUNG | 6.554 | Add to BOM |
| KLM4G1FEPD-B031 | NAND Flash, Blank, 1.70 V, 4 G, NA, W EMMC | Samsung | 6.554 | Add to BOM |
| KLM4G1FEAC-B031 | Cutting-edge NAND technology | Samsung Electronics | 8.312 | Add to BOM |
| KLM8G1GESD-B04P | Multimedia Storage Device | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| STI7105-DUD | High-definition video processing capabilities | STMicroelectronics | 6.554 | Add to BOM |
| S3C2410A26-YO80 | High-performance 266MHz 3.3V MPU with 272-Pin FBGA package and 16bit/32bit RISC architecture | SAMSUNG | 6.554 | Add to BOM |
| S29AL016D90BAI020 | PBGA48 Flash memory chip featuring 1 megabyte capacity and 90ns speed | SPANSION | 6.554 | Add to BOM |
| MT47H64M8CF-3:F | MT47H64M8CF-3:F | Micron Technology | 5.725 | Add to BOM |
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