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$5000SI7232DN-T1-GE3
SI7232DN-T1-GE3 Dual N-Channel MOSFET with 20 V rating
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Marcas: VISHAY INTERTECHNOLOGY INC
Parte do fabricante #: SI7232DN-T1-GE3
Ficha de dados: SI7232DN-T1-GE3 Ficha de dados (PDF)
Pacote/Caso: PowerPAK® 1212-8 Dual
Tipo de Produto: FET, MOSFET Arrays
Status RoHS:
Condição de estoque: 6.704 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI7232DN-T1-GE3 Descrição geral
IV. The SI7232DN-T1-GE3 is a state-of-the-art N-Channel Power Field-Effect Transistor engineered to deliver exceptional performance in power-sensitive applications. With a maximum drain current of 10A and a 0.0164ohm low on-resistance, this MOSFET offers superior power handling capabilities while minimizing conduction losses. Its 2-Element, leadless 1212-8 Powerpak-8 package ensures high power density and efficient thermal management, making it an ideal choice for space-constrained designs. The device's Silicon Metal-oxide Semiconductor FET technology provides fast switching speeds and reliable operation, meeting the demanding requirements of modern power electronics. Furthermore, its HALOGEN FREE AND ROHS COMPLIANT design underscores the manufacturer's commitment to sustainability and environmental responsibility. Whether utilized in automotive systems, battery management, or point-of-load regulation, the SI7232DN-T1-GE3 stands out as a dependable and efficient power switch
![SI7232DN-T1-GE3 SI7232DN-T1-GE3](/files/uploads/product/b/05181e090bef4e60b6b7975ef8feaea7.webp)
Características
- TrenchFET® power MOSFET
- Material categorization: for definitions of compliance please see
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 |
Reach Compliance Code | compliant | Samacsys Manufacturer | Vishay |
Application | SWITCHING | Case Connection | DRAIN |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-XDSO-C6 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | UNSPECIFIED |
Package Shape | SQUARE | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | C BEND | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SI7232DN-T1-GE3 chip is a power MOSFET designed for DC-DC converters and other high-frequency power applications. It offers low ON-resistance and a small form factor, making it suitable for space-constrained systems. This chip provides high efficiency and reliable performance, contributing to reduced power consumption and improved system performance.
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Features
The SI7232DN-T1-GE3 is a P-channel MOSFET with a voltage rating of -20V, a drain current of -8A, and a low on-resistance of 19mΩ. It has a small package size, making it suitable for space-constrained applications. It is designed for low power loss and high efficiency in a wide range of electronic devices. -
Pinout
The SI7232DN-T1-GE3 is a dual N-channel MOSFET with a pin count of 8 (SO-8 package). It is commonly used in power management applications for switching and amplification purposes due to its low on-resistance and fast switching speed. -
Manufacturer
The manufacturer of the SI7232DN-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a semiconductor company that specializes in the design, production, and distribution of power MOSFETs, ICs, diodes, and other electronic components. -
Application Field
The SI7232DN-T1-GE3 is a power MOSFET designed for use in a wide range of applications, including power supplies, motor control, and automotive systems. Its low on-resistance and high current handling capabilities make it suitable for power conversion and control circuits where efficiency and reliability are important. -
Package
The SI7232DN-T1-GE3 chip is available in a package type called PowerPAK SO-8. Its form is surface mount and measures approximately 5mm x 6mm.
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