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$5000SI7469DP-T1-E3
SI7469DP-T1-E3 is a MOSFET designed with an -80V Vds and a 20V Vgs, enclosed in a PowerPAK SO-8 package
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Marcas: Vishay
Parte do fabricante #: SI7469DP-T1-E3
Ficha de dados: SI7469DP-T1-E3 Ficha de dados (PDF)
Pacote/Caso: PowerPAK-SO-8
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 5.014 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI7469DP-T1-E3 Descrição geral
The SI7469DP-T1-E3 is a P-channel MOSFET designed for high-power applications. With a continuous drain current of -28A and a drain source voltage of -80V, this transistor offers reliable and efficient performance. Its low on-resistance of 0.021ohm and high power dissipation of 83W make it suitable for demanding tasks, whether in industrial, automotive, or consumer electronics
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Características
- Wide operating temperature range
- Excellent thermal performance
- Low noise and vibration
- Precise control and measurement
Aplicativo
- Precise switching control
- Durable battery management
- Flexible overvoltage protection
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 28 A | Rds On - Drain-Source Resistance | 29 mOhms |
Vgs - Gate-Source Voltage | + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 160 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 83 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 110 ns |
Forward Transconductance - Min | 52 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 220 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 95 ns | Typical Turn-On Delay Time | 45 ns |
Width | 5.15 mm | Part # Aliases | SI7469DP-E3 |
Unit Weight | 0.017870 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SI7469DP-T1-E3 is a high-speed, dual N-channel MOSFET power switch designed for load switches in portable applications. It features a low on-resistance and high current-handling capability, making it ideal for use in battery-powered devices where efficiency and reliability are crucial. This chip is commonly used in smartphones, tablets, and other handheld electronic devices.
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Equivalent
Some equivalent products of SI7469DP-T1-E3 chip are Infineon BSP742R and ON Semiconductor NTB74202N. These are all high-side smart power switches with similar features and specifications suitable for various applications. -
Features
SI7469DP-T1-E3 is a 20V, 60A p-channel MOSFET with low on-resistance and guaranteed avalanche performance. It is lead-free and RoHS-compliant, making it suitable for high-efficiency power management applications. It also has a compact footprint and is designed to handle high power densities. -
Pinout
The SI7469DP-T1-E3 is a dual P-channel MOSFET with a pin count of 8. Pin functions include gate (G), source (S), and drain (D) for the two P-channel MOSFETs. This device is commonly used for power management applications where high efficiency and compact size are required. -
Manufacturer
SI7469DP-T1-E3 is manufactured by Vishay Intertechnology, an American company that specializes in manufacturing discrete semiconductors and passive electronic components. Vishay Intertechnology is a global industry leader in creating components for a wide range of applications, including automotive, industrial, consumer, military, and aerospace sectors. -
Application Field
SI7469DP-T1-E3 is a P-channel MOSFET specifically designed for power management applications, including load switching and battery protection. It is commonly used in portable devices, IoT devices, and power supply modules. It offers low on-state resistance and high efficiency, making it suitable for high-performance and energy-efficient applications. -
Package
The SI7469DP-T1-E3 chip is a dual P-channel MOSFET in a PowerPAIR package. It comes in a reel form with a size of 4mm x 6mm.
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