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$5000IXXH110N65C4
High-voltage, high-current power module for efficient energy management
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Marcas: IXYS
Parte do fabricante #: IXXH110N65C4
Ficha de dados: IXXH110N65C4 Ficha de dados (PDF)
Pacote/Caso: TO-247AD-3
Tipo de Produto: Single IGBTs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXXH110N65C4 Descrição geral
Meet the IXXH110N65C4 power transistor, a high-performance component designed for power electronics applications that require efficiency and reliability. With a VDS of 650 volts, an ID of 110 amperes, and an RDS(on) of 75 milliohms, this transistor is engineered for high-power tasks where minimizing conduction losses is critical. Infineon Technologies' CoolMOS™ C4 series technology further enhances the transistor's capabilities, promoting superior thermal management and overall efficiency. Its low switching and conduction losses not only improve energy efficiency but also reduce heat generation, ensuring sustained performance even in challenging environments
Características
- High current rating of 110A with low on-state voltage drop
- This IGBT features fast switching and low power losses
- N-Channel technology ensures efficient power conversion
Aplicativo
- Faster charging speed
- Improved productivity
- Consistent power output
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | IXYS | Product Category: | IGBT Transistors |
RoHS: | Details | Technology: | Si |
Package / Case: | TO-247AD-3 | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 2.35 V | Maximum Gate Emitter Voltage: | - 20 V, + 20 V |
Continuous Collector Current at 25 C: | 235 A | Pd - Power Dissipation: | 880 W |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Series: | Trench | Packaging: | Tube |
Brand: | IXYS | Continuous Collector Current Ic Max: | 110 A |
Gate-Emitter Leakage Current: | 100 nA | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 30 | Subcategory: | IGBTs |
Tradename: | XPT |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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IXXH110N65C4 is a high voltage, high current IGBT chip designed for use in power electronics applications. It has a voltage rating of 650V and a current rating of 110A, making it suitable for high-power applications such as motor drives and industrial inverters. The C4 designation indicates that it is a fast-switching, low-loss chip with improved performance characteristics.
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Equivalent
Equivalent products of IXXH110N65C4 chip include IRFHB42S (Infineon Technologies), SCT2H12NZ (Rohm Semiconductor), and NDH722CT (ON Semiconductor). These chips are all power MOSFETs with similar specifications and features for various applications in power electronics and industrial systems. -
Features
1. High voltage (650V) and current (110A) rating 2. On-state resistance of 0.065 ohms 3. Fast switching speed 4. Low gate charge for improved efficiency 5. Suitable for high power applications 6. Reliable and durable design. -
Pinout
IXXH110N65C4 is a high power, fast switching IGBT module with a collector current of 110 A, a collector-emitter voltage of 650 V, and a power dissipation of 1100 W. It has 4 pins: gate, collector, emitter, and monitor. -
Manufacturer
IXXH110N65C4 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors. Infineon's products are used in various industries such as automotive, industrial, and consumer electronics. The company is known for its high-quality and innovative solutions in the semiconductor market. -
Application Field
IXXH110N65C4 is a high voltage power MOSFET that can be used in applications such as industrial power supplies, motor control, solar inverters, and renewable energy systems. It is also suitable for use in high power switching applications, voltage regulators, and DC-DC converters. -
Package
The IXXH110N65C4 chip has a TO-268 package type, is in a single MOSFET form, and is a size of 10.3 mm x 8.9 mm x 4.3 mm.
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