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TO-247AD-3
(58 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| DPG60C300HB | Through Hole TO-247-3 Diode Array, Consisting of 1 Pair with Common Cathode, Rated at 300 Volts and 30 Amperes | Littelfuse | 5.815 | Add to BOM |
| SF3004PT | Diode Switching 200V 30A 3-Pin(3+Tab) TO-3P | Taiwan Semiconductor Corporation | 7.742 | Add to BOM |
| IXGH17N100A | IGBT Transistors with a rating of 17 Amps and 1000V | IXYS | 9.458 | Add to BOM |
| IXSH24N60AU1 | IGBT and Diode Combination Pack | Ixys | 7.485 | Add to BOM |
| IXGH60N60C3 | IXGH60N60C3 product details: Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD | Littelfuse | 7.897 | Add to BOM |
| IXGH50N60B | The IXGH50N60B is designed for high-power applications requiring efficient switching at high voltages | Ixys | 8.889 | Add to BOM |
| IXGH48N60A3 | High-power N-channel IGBT for industrial applications | Littelfuse | 8.280 | Add to BOM |
| IXGH40N60B2D1 | 600V 75A 300W TO-247 N-Channel Transistor IGBT Chip | Ixys | 6.641 | Add to BOM |
| IXGH39N60BD1 | The IXGH39N60BD1 is a versatile transistor chip that is commonly used in power electronics | Ixys | 9.944 | Add to BOM |
| IXGH35N120B | IGBT Transistors capable of handling 70 Amps and 1200V, with a 3.3 Rds | IXYS | 9.458 | Add to BOM |
| IXGH32N60CD1 | IGBT Transistors capable of 2.5 Rds with 60 Amps rating | Ixys | 6.428 | Add to BOM |
| IXGH30N60C2 | High Voltage IGBT Transistor with 30 Amps and Low Rds | IXYS | 9.458 | Add to BOM |
| IXGH30N60B2D1 | Transistor IGBT Chip | Littelfuse | 7.575 | Add to BOM |
| IXGH25N160 | These IGBT Transistors | Ixys | 8.845 | Add to BOM |
| IXGH24N60B | IGBT Transistor model IXGH24N60B, featuring HIPERFAST technology, 600V, 48A | Ixys | 9.713 | Add to BOM |
| IXGH20N60BU1 | TO-247AD Package for Three-Pin IGBT Chip | Ixys | 8.384 | Add to BOM |
| IXBH40N160 | CH 1600V 33A 350W TO-247AD | Littelfuse | 9.476 | Add to BOM |
| IXBH16N170 | Transistors that utilize Insulated Gate Bipolar Transistor technology, capable of handling 1700 volts and 25 amperes | Littelfuse | 5.023 | Add to BOM |
| IXGH60N60C3D1 | Advanced IGBT technology for reliable energy managemen | LITTELFUSE INC | 8.260 | Add to BOM |
| IXGH30N60C3D1 | TO-247AD IGBTs IXGH30N60C3D1 ROHS | Littelfuse | 9.458 | Add to BOM |
| IXXH110N65C4 | High-voltage, high-current power module for efficient energy management | IXYS | 9.458 | Add to BOM |
| IXGH40N120B2D1 | Insulated Gate Bipolar Transistor with a voltage rating of 1.2kV and a current rating of 75A, in a TO-247AD package | IXYS | 9.458 | Add to BOM |
| IXGH40N120C3D1 | TO247-3 packaged transistor featuring the latest GenX3™ technology for improved efficiency and performance | Littelfuse | 9.458 | Add to BOM |
| IXGH24N60AU1 | TO247AD IGBT with specifications of 600V, 48A, 150W | Ixys | 5.272 | Add to BOM |
| IXSH25N120A | 5N120A IGBT chip | Ixys | 8.494 | Add to BOM |
| MBR30150PT | Schottky Diode with 150V Voltage Rating and 30A Current Rating | Taiwan Semiconductor | 7.977 | Add to BOM |
| DPG80C300HB | General-purpose diodes optimized for power applications | IXYS | 9.458 | Add to BOM |
| IXGH32N60A | IXGH32N60A Transistors | ixys | 8.086 | Add to BOM |
| IXGH6N170 | Robust and reliable, this through-hole IGBT is suitable for demanding power electronics design | IXYS | 5.254 | Add to BOM |
| IXGH6N170A | 75W 6A 1.7kV NPT TO-247-3 IGBTs ROHS | IXYS | 9.458 | Add to BOM |
| IRGP4640D-EPBF | IRGP4640D-EPBF is a discrete IGBT with an anti-parallel diode | Infineon | 9.458 | Add to BOM |
| IRGP4066D-EPBF | IRGP4066D Series 600 V 140 A UltraFast Soft Recovery Trench IGBT - TO-247AD | Infineon Technologies | 5.770 | Add to BOM |
| MBR6045PT | Diode Array 1 Pair Common Cathode 45 V 60A Through Hole TO-247-3 | Taiwan Semiconductor | 9.458 | Add to BOM |
| MBR30200PT | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-247-3 | Taiwan Semiconductor | 9.458 | Add to BOM |
| MBR4045PT | Diode Array 1 Pair Common Cathode 45 V 20A Through Hole TO-247-3 | Taiwan Semiconductor | 9.458 | Add to BOM |
| IXGH20N60 | IGBT 600 V 40 A 150 W Through Hole TO-247AD | IXYS | 9.458 | Add to BOM |
| SF3008PT | Diode 600 V 30A Through Hole TO-247AD (TO-3P) | Taiwan Semiconductor | 9.458 | Add to BOM |
| DHG60C600HB | Diode Array 1 Pair Common Cathode 600 V 30A Through Hole TO-247-3 | IXYS | 9.458 | Add to BOM |
| DMA80IM1600HB | Single Diode Standard Rectifier | IXYS | 9.458 | Add to BOM |
| IXGH10N100 | IGBT 1000 V 20 A 100 W Through Hole TO-247AD | IXYS | 9.458 | Add to BOM |
| DPG60C400HB | Diode Array 1 Pair Common Cathode 400 V 30A Through Hole TO-247-3 | IXYS | 9.458 | Add to BOM |
| DPG60C200HB | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-247-3 | IXYS | 9.458 | Add to BOM |
| MBR30100PT | Dual Common Cathode 810mV@15A Schottky Barrier Diodes TO-247 Schottky Barrier Diodes (SBD) ROHS | Taiwan Semiconductor | 5.515 | Add to BOM |
| IXGH60N60C2 | Original Equipment Manufacturers and Contract Manufacturers eligible only | Littelfuse | 4.124 | Add to BOM |
| IXGH50N120C3 | N-Channel 1200V 75A IGBT Chip for TO-247 Package | Littelfuse | 2.263 | Add to BOM |
| IXGH28N60B3D1 | ROHS-compliant TO-247-3 package containing IGBTs with a 190W power rating | Littelfuse | 9.773 | Add to BOM |
| IXGH48N60C3D1 | Transistor IGBT Chip rated at 600V and 75A | Littelfuse | 4.512 | Add to BOM |
| IXGH40N60C | Advanced three-pin transistor design for efficient switching in heavy-duty industrial environments | Ixys | 5.285 | Add to BOM |
| IXGH20N120A3 | IGBT Transistors 1200V 20A | Littelfuse | 3.436 | Add to BOM |
| MBR3045PT | 45V Dual Common Cathode 30A 580mV TO-247 Schottky Barrier Diodes (SBD) ROHS | Onsemi | 4.440 | Add to BOM |
Outro pacote