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IXTK120N25P
3-Pin N-Channel Transistor with TO-264AA Package, rated for 250V and 120A
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Marcas: Ixys
Parte do fabricante #: IXTK120N25P
Ficha de dados: IXTK120N25P Ficha de dados (PDF)
Pacote/Caso: TO-264-3
Status RoHS:
Condição de estoque: 6.852 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $11,294 | $11,294 |
200 | $4,371 | $874,200 |
500 | $4,218 | $2109,000 |
1000 | $4,142 | $4142,000 |
Em estoque: 6.852 PCS
IXTK120N25P Descrição geral
When it comes to high-performance applications, the IXTK120N25P is a top contender. This high-power MOSFET transistor boasts a formidable 250V drain-source voltage rating and a continuous drain current of 120A. With a low on-resistance of 0.057 ohms, this N-Channel enhancement mode power MOSFET offers efficient power dissipation and minimal thermal resistance, leading to improved efficiency and reduced power losses. The TO-264 package enhances thermal conduction and power dissipation, while the wide operating temperature range of -55°C to 175°C ensures versatility in various environmental conditions
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Características
- Low input capacitance
- High speed switching
- Suitable for DC-DC converters
- Low electromagnetic interference (EMI)
Aplicativo
- Advanced power transistor for welding
- Efficient control in motor applications
- Versatile MOSFET for power supplies
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-264-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 250 V |
Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 185 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 700 W |
Channel Mode | Enhancement | Tradename | PolarHT |
Series | IXTK120N25 | Brand | IXYS |
Configuration | Single | Fall Time | 33 ns |
Forward Transconductance - Min | 50 S | Height | 26.16 mm |
Length | 19.96 mm | Product Type | MOSFET |
Rise Time | 33 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | PolarHT Power MOSFET | Typical Turn-Off Delay Time | 130 ns |
Typical Turn-On Delay Time | 30 ns | Width | 5.13 mm |
Unit Weight | 0.352740 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXTK120N25P is a power MOSFET transistor chip designed for high power switching applications. It has a continuous current rating of 120A and a voltage rating of 250V. Its compact size and high efficiency make it ideal for use in power supplies, motor control, and other high-power applications.
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Equivalent
Some equivalent products of IXTK120N25P chip are IXFN120N25P, IXFN120N25T, IXKF120N25P, and IXKD120N25P. These devices are also power MOSFETs designed for high frequency and high power applications with similar specifications and performance characteristics. -
Features
The IXTK120N25P is a power MOSFET transistor with a voltage rating of 250V and a current rating of 120A. It has a low on-resistance of 48 mΩ and a fast switching speed. This transistor is suitable for high power applications such as motor control, power supplies, and inverters. -
Pinout
The pin count of IXTK120N25P is 7 pins. This device is a high-power N-channel IGBT (Insulated Gate Bipolar Transistor) module used for power switching applications. It combines the high-speed and low-voltage drive capabilities of an MOSFET with the high-current and low-saturation voltage capabilities of a bipolar transistor. -
Manufacturer
IXTK120N25P is manufactured by IXYS Corporation. They are a multinational semiconductor company specializing in the development and production of power semiconductors, integrated circuits, and power systems for a wide range of industries including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
IXTK120N25P is commonly used in applications such as industrial power supplies, motor controls, welding equipment, and switch mode power supplies. It is also used in automotive and transportation systems, as well as in renewable energy systems like solar inverters and wind turbines. -
Package
The IXTK120N25P chip is in a TO-264 package, with a transistor form and size of 3.3 mm x 10 mm.
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