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$5000IXSH24N60AU1
IGBT and Diode Combination Pack
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Marcas: Ixys
Parte do fabricante #: IXSH24N60AU1
Ficha de dados: IXSH24N60AU1 Ficha de dados (PDF)
Pacote/Caso: TO-247AD-3
Tipo de Produto: Single IGBTs
Status RoHS:
Condição de estoque: 7.485 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXSH24N60AU1 Descrição geral
When it comes to power electronics, the IXSH24N60AU1 is a standout choice for high-speed MOSFET power transistors. Boasting a high current rating of 24A and a voltage rating of 600V, this transistor is optimized for demanding power conversion applications such as switch mode power supplies and motor controls. Its advanced silicon technology delivers efficiency and reliability, while the low on-resistance of 0.24 ohms minimizes heat dissipation for energy-efficient performance. The fast switching speed of the IXSH24N60AU1 enables high-frequency operation, reducing switching losses and enhancing overall efficiency. Housed in a TO-247 package, this transistor offers superior thermal performance and power dissipation capabilities for reliable operation in challenging environments. With features like overcurrent protection and overtemperature shutdown, the IXSH24N60AU1 ensures safe and secure operation across various power electronics applications
Características
- Fast switching speed
- High current handling capability
Aplicativo
- Emerging Technologies
- Green Energy Initiatives
- Reliable Power Conversion
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247AD-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | IXSH24N60 | Brand | IXYS |
Continuous Collector Current Ic Max | 48 A | Height | 21.46 mm |
Length | 16.26 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Width | 5.3 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXSH24N60AU1 is a high voltage and high-speed power MOSFET that is commonly used in power electronics applications. With a voltage rating of 600V and a current rating of 24A, this chip is suitable for a wide range of switching and amplification tasks. Its advanced design allows for efficient power handling and improved performance in various applications.
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Equivalent
The equivalent products of IXSH24N60AU1 chip are IXSH24N60UF1, IXSH24N60BU1, IXSH24N60BU1, and IXSH24N60UF1. These chips are all high voltage power transistors with similar specifications and performance characteristics, making them suitable replacements for each other in various electronic applications. -
Features
1. Low on-resistance of 0.18 ohms 2. High voltage of 600V 3. Avalanche energy rated at 662mJ 4. Fast switching speed 5. High reliability and ruggedness 6. Designed for high power applications 7. TO-247 package for easy mounting 8. RoHS compliant and lead-free -
Pinout
The IXSH24N60AU1 has 3 pins (Gate, Drain, Source) and functions as a high-speed, rugged, and efficient IGBT (Insulated Gate Bipolar Transistor) with a 600V rating and a continuous collector current of 24A. It is designed for power electronics applications requiring high efficiency and reliability. -
Manufacturer
IXYS Corporation is the manufacturer of the IXSH24N60AU1. It is a global semiconductor company that designs, manufactures, and markets power semiconductors, radio-frequency (RF) power semiconductors, and digital and analog integrated circuits. They serve a wide range of markets including automotive, industrial, consumer, and communication sectors. -
Application Field
The IXSH24N60AU1 can be used in a variety of applications such as power supplies, motor control, renewable energy systems, and industrial equipment. This MOSFET module is designed for high-speed switching and efficient power control in these applications, making it ideal for use in a wide range of industries. -
Package
The IXSH24N60AU1 chip is available in a TO-247 package type with a single form and size of 10.54mm x 15.87mm.
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