HGTB12N60D1C

Part points

• The HGTB12N60D1C is a high-performance IGBT chip designed for power electronic applications. It features a low conduction and switching losses, high current rating, and high reliability. This chip is commonly used in power inverters, motor drives, and welding equipment.

• Equivalent

  Some equivalent products of HGTB12N60D1C chip are the MGB12N60D1C, IRG4BC20K, and FGA25N120ANTD. These chips have similar specifications and can be used as substitutes in various applications requiring a powerful and efficient IGBT chip.

• Features

  HGTB12N60D1C is an N-channel IGBT transistor with a voltage rating of 600V, a current rating of 24A, and a power dissipation of 375W. It has a low on-state voltage drop, high switching speed, and low tail current. This device is suitable for various power applications including motor control, inverters, and switching power supplies.

• Pinout

  The HGTB12N60D1C is a power MOSFET transistor with a TO-263 package and a pin count of 3 (G, D, S). The function of this transistor is to switch or amplify electrical signals in high power applications, such as in motor control or power supplies.

• Manufacturer

  The manufacturer of the HGTB12N60D1C is Infineon Technologies. Infineon is a global semiconductor company that designs, manufactures, and markets a wide range of products, including microcontrollers, power semiconductors, and sensors for automotive, industrial, and renewable energy applications.

• Application Field

  The HGTB12N60D1C is a high voltage, high speed IGBT designed for applications in power supplies, motor control, renewable energy systems, and industrial automation. It is commonly used in switch mode power supplies, inverters, and motor drives due to its high efficiency, fast switching speed, and ability to handle high power levels.

• Package

  The HGTB12N60D1C chip comes in a TO-263-3 package, with a single form factor and a size of 10mm x 9.5mm.