Pedidos acima de
$5000ON FDS4935BZ
Mosfet Array 30V 6.9A 900mW Surface Mount 8-SOIC
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: ON
Parte do fabricante #: FDS4935BZ
Ficha de dados: FDS4935BZ Ficha de dados (PDF)
Pacote/Caso: SOP8
Tipo de Produto: FET, MOSFET Arrays
Status RoHS:
Condição de estoque: 6.536 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FDS4935BZ Descrição geral
Revolutionize your power supply designs with the FDS4935BZ. This innovative P-Channel MOSFET is tailor-made to enhance the efficiency of DC/DC converters and battery chargers, offering faster switching and lower gate charge than competing MOSFETs. With its superior performance characteristics, the FDS4935BZ ensures safe and easy driving, even at high frequencies, while significantly improving overall efficiency in power supply applications. Upgrade to the FDS4935BZ and experience the difference in performance and reliability in your designs
![FDS4935BZ FDS4935BZ](/files/uploads/product/b/7c81a98541b443bb95fbbcde90d0f102.webp)
Características
- Real-time video processing
- High-definition image quality
- Advanced noise reduction algorithm
Aplicativo
- Perfect for everyday use.
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 6.9 A | Rds On - Drain-Source Resistance | 18 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 29 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDS4935BZ | Brand | onsemi / Fairchild |
Configuration | Dual | Fall Time | 13 ns |
Forward Transconductance - Min | 22 S | Height | 1.75 mm |
Length | 4.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 13 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 68 ns | Typical Turn-On Delay Time | 12 ns |
Width | 3.9 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDS4935BZ chip is a MOSFET transistor designed for use in switching applications. It has a low on-resistance and can handle high currents, making it suitable for various power management circuits. The chip can be used in scenarios such as battery charging, motor control, and LED lighting. Overall, the FDS4935BZ chip offers a compact and efficient solution for switching applications that require high performance and reliability.
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Features
The FDS4935BZ is a dual N-channel MOSFET transistor with a low on-resistance and a high drain current. It has a gate threshold voltage of 2.5V to 4V, a drain-source voltage of 30V, and a continuous drain current of 13A. The package type is D-PAK, making it suitable for various electronic applications. -
Pinout
The FDS4935BZ is a 30V dual N-channel power MOSFET. It has a 6-pin configuration with two N-channel MOSFETs in a single package. The pins include Gate 1, Source 1, Drain 1, Gate 2, Source 2, and Drain 2. It is commonly used for power management applications. -
Manufacturer
The manufacturer of the FDS4935BZ is Fairchild Semiconductor Corporation. It is an American company that specializes in the design, development, and production of power management and analog & mixed-signal integrated circuits. -
Application Field
The FDS4935BZ is a small signal MOSFET that can be used in a wide range of applications, including power management, voltage regulation, motor control, and switch mode power supplies. It can also be used in audio amplifiers, LED drivers, and battery charging circuits. -
Package
The FDS4935BZ chip is in a package type called SOP-8, which stands for Small Outline Package with 8 pins. The form of the chip is surface mount. The size of the chip is approximately 5.3mm x 6.2mm x 1.75mm.
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Temos produtos ricos que podem atender às suas diversas necessidades.
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A menor taxa de envio internacional começa em US$ 0,00
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