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ON FDB52N20TM
N-Channel 200 V 52A (Tc) 357W (Tc) Surface Mount TO-263 (D2PAK)
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDB52N20TM
Ficha de dados: FDB52N20TM Datasheet (PDF)
Pacote/Caso: D2PAK
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2756 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFDB52N20TM Descrição geral
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Características
- RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A
- Low gate charge ( Typ. 49nC)
- Low Crss ( Typ. 66pF)
- 100% avalanche tested
Aplicativo
- This product is general usage and suitable for many different applications.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Source Content uid | FDB52N20TM | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | D2PAK-3/2 | Manufacturer Package Code | 418AJ |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 10 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 2520 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 52 A | Drain-source On Resistance-Max | 0.049 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263 |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 357 W |
| Pulsed Drain Current-Max (IDM) | 208 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | UniFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 200 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 52 | |
| feature-maximum-drain-source-resistance-mohm | 49@10V | feature-typical-gate-charge-vgs-nc | 49@10V |
| feature-typical-gate-charge-10v-nc | 49 | feature-typical-input-capacitance-vds-pf | 2230@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 357000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDB52N20TM is a power MOSFET chip designed for various electronic applications. It has a high voltage rating of 200V and a continuous drain current of 52A, making it suitable for power switch devices. The chip features low on-resistance and fast switching capabilities, providing efficient power conversion. Its compact size and durability make it an ideal choice for automotive, industrial, and consumer electronics.
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Equivalent
Some equivalent products of the FDB52N20TM chip are the IRFP250N and the IRFB11N50A. -
Features
The features of FDB52N20TM include N-channel MOSFET technology, a drain-source voltage of 200V, a continuous drain current of 52A, a low on-state resistance of 36mΩ, and a fast switching speed. It is suitable for various applications, including power supplies, motor drives, and inverters. -
Pinout
The FDB52N20TM is a MOSFET transistor with a TO-263 package, consisting of 3 pins. Pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. It is commonly used in power electronic applications due to its high voltage and current handling capabilities. -
Manufacturer
The manufacturer of the FDB52N20TM is Fairchild Semiconductor. It is an American company that specializes in the design, development, and manufacturing of power management solutions. It offers a wide range of products including discrete semiconductors, integrated circuits, and optoelectronics for various industries such as automotive, industrial, and telecommunication. -
Application Field
The FDB52N20TM transistor is commonly used in various applications such as motor control, power supplies, and audio amplifier circuits. Additionally, it is suitable for use in high-speed switching applications due to its low resistance and fast-switching capability. -
Package
The FDB52N20TM chip is available in TO-263 package type. It has a form of a flat, rectangular shape with three leads. The size dimensions of the package are typically around 10mm x 10mm x 2mm.
Ficha de dados PDF
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