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ON FDB3682
N-Channel 100 V 6A (Ta), 32A (Tc) 95W (Tc) Surface Mount TO-263 (D2PAK)
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDB3682
Ficha de dados: FDB3682 Datasheet (PDF)
Pacote/Caso: TO-263
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2867 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaFDB3682 Descrição geral
N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
Características
- RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A
- Qg(tot) = 18.5nC (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Aplicativo
- This product is general usage and suitable for many different applications.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Source Content uid | FDB3682 | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | TO-263AB, 3 PIN | Manufacturer Package Code | 418AJ |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 13 Weeks | Samacsys Manufacturer | onsemi |
| Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 6 A | Drain-source On Resistance-Max | 0.036 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 95 W | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | TMOS | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 6 |
| feature-maximum-drain-source-resistance-mohm | 36@10V | feature-typical-gate-charge-vgs-nc | 18.5@10V |
| feature-typical-gate-charge-10v-nc | 18.5 | feature-typical-input-capacitance-vds-pf | 1250@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 95000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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![Embalagem individual]( "Embalagem individual")
Etapa4 :Embalagem individual
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![Caixas de embalagem]( "Caixas de embalagem")
Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDB3682 chip is an integrated circuit used for power management in electronic devices. It provides efficient control over power distribution, voltage regulation, and current flow in order to optimize device performance and reliability. The chip is commonly used in various applications, such as smartphones, tablets, and other portable devices.
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Equivalent
The equivalent products of the FDB3682 chip are FBQû7124B, FSQû710A, FSQû711, FSQû745, and FSQû745R. -
Features
FDB3682 is a power MOSFET with a low on-state resistance and high current handling capability. It is designed for use in high voltage applications and offers reliable switching performance. It features a built-in diode for reverse current protection and has a compact size for space-saving integration. -
Pinout
The FDB3682 is a MOSFET transistor with a pin count of 6. Its function is to amplify and switch electronic signals or power in electronic circuits. -
Manufacturer
FDB3682 is a power MOSFET transistor manufactured by Fairchild Semiconductor, which is a global semiconductor supplier. Fairchild Semiconductor is a company that designs, produces, and sells a wide range of electronic components, including power management devices, discrete semiconductors, and integrated circuits. -
Application Field
The FDB3682 is a high-voltage power-switching transistor designed for a variety of applications. Its use is commonly found in switch mode power supplies, lighting applications, motor control circuits, and other high-power applications where efficient power switching is required. -
Package
The FDB3682 chip comes in a DFN-8 package type, in the form of a square-shaped chip with a size of approximately 3mm x 3mm.
Ficha de dados PDF
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A quantidade mínima de pedido começa em 1 unidade.
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Amazing quality and reliability - the go-to for electronic components.