Pedidos acima de
$5000BSS123,215
In the TO236AB package, the BSS123,215 transistor is a 100V N-MOSFET designed for unipolar operation with a maximum current rating of 0
Marcas: Nexperia USA Inc.
Parte do fabricante #: BSS123,215
Ficha de dados: BSS123,215 Ficha de dados (PDF)
Pacote/Caso: SOT-23-3
Status RoHS:
Condição de estoque: 9.158 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
10 | $0,055 | $0,550 |
100 | $0,046 | $4,600 |
300 | $0,041 | $12,300 |
3000 | $0,036 | $108,000 |
6000 | $0,033 | $198,000 |
9000 | $0,032 | $288,000 |
Em estoque: 9.158 PCS
BSS123,215 Descrição geral
Manufactured by Infineon Technologies, the BSS123,215 is a dual N-channel enhancement-mode MOSFET transistor designed for low voltage applications. With a maximum drain-source voltage of 55V and a continuous drain current of 170mA, this transistor is suitable for small electronic devices and applications with limited space. The BSS123,215 comes in a SOT-23 package and features two independent N-channel MOSFETs, allowing for separate control and operation of each channel. It boasts a low threshold voltage of 1.5V, making it ideal for low voltage applications such as battery-powered devices. Additionally, its low on-resistance of around 3.2 ohms minimizes power dissipation and improves efficiency. The BSS123,215 also offers high-speed switching capability, with a typical turn-on and turn-off time of 19ns and 12ns respectively, enabling quick and efficient switching performance in applications requiring high-speed operation
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Series | TrenchMOS™ | Product Status | Not For New Designs |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 6Ohm @ 120mA, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 25 V | Power Dissipation (Max) | 250mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB | Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | BSS123 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The BSS123 and BSS215 are both N-channel MOSFET transistors designed for low voltage and low power applications. They offer high switching speeds, low on-resistance, and excellent thermal performance. These chips are often used in applications such as power management, signal amplification, and voltage regulation.
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Equivalent
The equivalent products of BSS123 include BSS84, BSS138, and BSS169 transistors. The equivalent products of the BSS215 chip are BSS87, BSS86, and BSS191 transistors. These alternatives can be used as substitutes in electronic circuits with similar specifications and characteristics. -
Features
BSS123,215 is a low threshold N-channel enhancement mode vertical DMOS transistor with high voltage capability, low gate threshold voltage, and low on-state resistance. It is ideal for use in low voltage applications such as portable electronics and power management circuits. -
Pinout
The BSS123,215 is a small signal MOSFET with 3 pins: gate, drain, and source. It is typically used for switching and amplifying electronic signals in low voltage applications. The pin count is 3 and the functions of the pins are to control the flow of current between the drain and source terminals. -
Manufacturer
The BSS123,215 is manufactured by NXP Semiconductors, a Dutch-American semiconductor manufacturer specializing in secure connectivity solutions for electronics and automotive industries. NXP Semiconductors is a global company that develops and produces a wide range of semiconductor products, including microcontrollers, power management, and RF transistors. -
Application Field
The BSS123 and BSS215 are both N-channel MOSFET transistors commonly used in low voltage applications such as power management, battery charging, and sensor circuits. They are also used in electronic switches, amplifiers, and motor control systems in various consumer electronics, automotive, and industrial applications. -
Package
The BSS123,215 chip is available in a surface-mount SOT-23 package. It is a N-channel MOSFET transistor with a size of 2.9mm x 1.3mm x 1.3mm.
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