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TO-247-3
(1804 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| FCH47N60N | High-Voltage N-Channel MOSFET with FRFET Technology (Technical Specification) | onsemi | 9.458 | Add to BOM |
| DSA70C100HB | TO-247 Schottky diode rated for 100V and 35A | Ixys | 8.485 | Add to BOM |
| BUX98APW | Robust TO- package design ensures optimal performanc | Onsemi | 5.078 | Add to BOM |
| ARF460BG | RF Mosfet 125 V 50 mA 40.68MHz 15dB TO-247CS | Microchip Technology | 5.815 | Add to BOM |
| APT8075BN | APT8075BN is a product made by Microchip Technology | Microchip | 5.681 | Add to BOM |
| APT14M120B | Reliable and efficient switching device for industrial control system | Microchip Technology | 8.194 | Add to BOM |
| APT15DQ60BG | Diode 600 V 15A Through Hole TO-247 [B] | Microchip Technology | 7.666 | Add to BOM |
| APT30D100BHBG | Rectifier Diode Switching 1KV 30A 290ns 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 6.326 | Add to BOM |
| ARF449AG | RF Mosfet 150 V 81.36MHz 13dB 90W TO-247 | Microchip Technology | 9.281 | Add to BOM |
| APT5020BVFRG | APT5020BVFRG is a MOSFET with a rating of 500V and a maximum current of 26A | Microchip Technology | 9.461 | Add to BOM |
| APT60N60BCSG | N-Channel 600 V 60A (Tc) 431W (Tc) Through Hole TO-247 [B] | Microchip Technology | 8.736 | Add to BOM |
| APT7M120B | Product APT7M120B is a N Channel MOSFET with a voltage rating of 1.2kV and a current rating of 8A | Microchip Technology | 9.615 | Add to BOM |
| APT47N60BC3G | N-Channel 600 V 47A (Tc) 417W (Tc) Through Hole TO-247 [B] | Microchip Technology | 6.421 | Add to BOM |
| APT38N60BC6 | The APT38N60BC6 transistor is a N-type metal-oxide semiconductor field-effect transistor with unipolar characteristics | Microchip Technology | 6.330 | Add to BOM |
| APT5025BN | Product APT5025BN from Microchip Technology offers cutting-edge features tailored for diverse applications | Microchip | 5.769 | Add to BOM |
| NGTB40N120SWG | IGBT Transistors FSII 40A 1200V Welding | onsemi | 8.323 | Add to BOM |
| IRGP20B60PDPBF | Packaged in a tube for convenient storage and transportation | Infineon | 6.130 | Add to BOM |
| IRG4PC50WPBF | Insulated Gate Bipolar Transistor, IRG4PC50WPBF | Infineon Technologies | 7.321 | Add to BOM |
| IXGH48N60B3D1 | TO247AD 48A 300W 600V | IXYS | 7.466 | Add to BOM |
| IXGH32N60C | Power Transistors with 60 Amps current capability | IXYS | 8.992 | Add to BOM |
| IXGH30N120B3D1 | 0N120B3D1, IGBT PT 1200 V 300 W Through Hole TO-247AD": | IXYS | 5.307 | Add to BOM |
| IXBH9N160G | ROHS-certified TO-247-3 IGBTs | IXYS | 8.390 | Add to BOM |
| IXBH42N170A | Compact TO-D package with excellent thermal management capabilitie | IXYS | 5.996 | Add to BOM |
| IXBH42N170 | BIMOSFET TO247 with Single IGBT Discrete Diode, 42A, 1700V | IXYS | 5.996 | Add to BOM |
| IXBH32N300 | N-Channel IGBT Chip Transistor with 3000V 80A 400W TO-247AD package | IXYS | 8.494 | Add to BOM |
| IXBH16N170A | IGBTs ROHS 150W 16A 1.7kV TO-247AD | IXYS | 8.124 | Add to BOM |
| IRGPH40F | Top quality chip for IGBT functionality | Infineon | 9.636 | Add to BOM |
| IRGPC50F | This product is an Insulated Gate Bipolar Transistor chip designed for high power applications with a maximum voltage of 600V | Infineon | 7.420 | Add to BOM |
| IRGP50B60PD1PBF | Transistor Insulated Gate Bipolar Transistor (IGBT) Chip | Infineon | 8.331 | Add to BOM |
| IRGP35B60PDPBF | IGBT Transistor Chip with N-Channel, 600V Voltage Rating, 60A Current Rating, 308W Power Rating, 3-Pin TO-247AC Package | Infineon | 5.882 | Add to BOM |
| IRG4PH40K | N-Channel Transistor IGBT Chip with 1200V 30A 160W 3-Pin(3+Tab) TO-247AC Tube | Infineon Technologies | 9.497 | Add to BOM |
| IRG4PH30KD | IRG4PH30KD: IGBT | Infineon Technologies | 6.177 | Add to BOM |
| IRG4PC50U | IGBT IRG4PC50U 55A TO247 | Infineon Technologies | 6.017 | Add to BOM |
| IRG4PC40U | IGBT IRG4PC40U 40A TO247 | Infineon Technologies | 6.599 | Add to BOM |
| IRG4PC30S | Tube Packaging for IRG4PC30S | Infineon Technologies | 7.478 | Add to BOM |
| IKW40T120 | Indium Gallium Tungsten IGBTs | Infineon | 7.446 | Add to BOM |
| IKW25N120T2 | The product IKW25N120T2 is an IGBT module designed for high-voltage applications, boasting a 1200-volt rating and a 50-amp current capacity | Infineon | 6.833 | Add to BOM |
| SGW50N60HS | High speed IGBT transistors with 600V and 50A capacity | Infineon | 9.117 | Add to BOM |
| SGW30N60HS | IGBT Transistors with 30A current capacity, High Speed NPT Technology and 600V voltage rating | Infineon | 7.152 | Add to BOM |
| SGW30N60 | Featuring a current rating of 41A and voltage handling capacity of 600V | Infineon | 7.676 | Add to BOM |
| NGTB40N120IHLWG | IGBT Trench Field Stop 1200 V 80 A 260 W Through Hole TO-247-3 | onsemi | 8.215 | Add to BOM |
| NGTB30N120IHSWG | IGBT Trench Field Stop 1200 V 60 A 192 W Through Hole TO-247-3 | onsemi | 9.643 | Add to BOM |
| NGTB25N120LWG | N-channel insulated gate bipolar transistor for efficient current contr | Onsemi | 7.573 | Add to BOM |
| NGTB25N120IHLWG | IGBT Chip with N-type conductivity.. | onsemi | 9.630 | Add to BOM |
| IKW75N65ES5 | High Speed Soft Switching IGBT equipped with Full Current Rated RAPID 1 diode | Infineon | 9.353 | Add to BOM |
| STGW45NC60WD | This product, STGW45NC60WD, belongs to the category of IGBT transistors, specifically designed for power applications | Stmicroelectronics | 6.463 | Add to BOM |
| STGW40NC60V | 00 Volt 50 Amp N-Ch IGBT Transistors | Stmicroelectronics | 8.559 | Add to BOM |
| SKW30N60HS | IGBT Chip with N-CH 600V 41A 250W 3-Pin TO-247 Package | Infineon | 8.034 | Add to BOM |
| SKW30N60 | N-Channel IGBT Chip Transistor 600V 41 Amps 250 Watts 3-Pin (3+Tab) TO-247 Tube | Infineon | 9.050 | Add to BOM |
| SKW25N120 | TO-247-3 IGBTs ROHS | Infineon | 9.756 | Add to BOM |
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