IXGH32N60C

Part points

• The IXGH32N60C is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) chip designed for use in power electronic applications such as motor control and power supply systems. It features low saturation voltage, high current capability, and robust construction for efficient and reliable operation.

• Equivalent

  The equivalent products of IXGH32N60C chip are FGY75N60SMD and IXGR32N60C. These are also insulated gate bipolar transistors (IGBTs) with similar specifications and performance capabilities, making them suitable alternative options for the IXGH32N60C chip.

• Features

  1. VCES = 600V 2. IC25 = 69A 3. RDS(on) = 0.18Ω 4. positive temperature coefficient 5. High dV/dt capability 6. Minimized recovery loss 7. Low EMI 8. RoHS compliant

• Pinout

  The IXGH32N60C is a high voltage IGBT with a pin count of 3. It has functions for gate, collector, and emitter. The gate pin controls the switching of the IGBT, the collector pin carries the main current, and the emitter pin is the ground connection.

• Manufacturer

  The IXGH32N60C is manufactured by IXYS Corporation. IXYS Corporation is a power semiconductor company that designs, manufactures, and markets a variety of power semiconductors, including power MOSFETs, IGBTs, and rectifiers, for applications such as power supply systems, motor drives, and renewable energy systems.

• Application Field

  The IXGH32N60C can be used in various applications such as induction heating, welding equipment, switch mode power supplies, and motor drives. It is also suitable for use in high-frequency power converters, uninterruptible power supplies, and high-voltage power inverters. Its low saturation voltage and fast switching speed make it ideal for high-power, high-frequency applications.

• Package

  The IXGH32N60C chip comes in a TO-247 packaging type. It is a discrete semiconductor with a through-hole mounting form. The package size measures 31.8mm x 15.8mm x 4.7mm.