ON NTR2101PT1G
Single P-Channel 8 V 120 mOhm 15 nC 0.96 W Silicon SMT Mosfet - SOT-23
Marcas: ON Semiconductor, LLC
Parte do fabricante #: NTR2101PT1G
Ficha de dados: NTR2101PT1G Datasheet (PDF)
Pacote/Caso: SOT-23
Status RoHS:
Condição de estoque: 3387 peças, novo original
Tipo de Produto: Transistores
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
5 | $0,154 | $0,770 |
50 | $0,122 | $6,100 |
150 | $0,107 | $16,050 |
500 | $0,090 | $45,000 |
3000 | $0,082 | $246,000 |
6000 | $0,078 | $468,000 |
In Stock:3387 PCS
NTR2101PT1G Descrição geral
P CHANNEL MOSFET, -8V, 3.7A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.7A; Drain Source Voltage Vds: -8V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 960mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Características
- Leading Trench Technology for Low RDS(on)
- -1.8 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint (3x3mm)
Aplicativo
- High Side Load Switch
- DC-DC Conversion
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Source Content uid | NTR2101PT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Part Package Code | SOT-23 (TO-236) 3 LEAD | Package Description | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
Pin Count | 3 | Manufacturer Package Code | 318-08 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 59 Weeks | Samacsys Manufacturer | onsemi |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 8 V |
Drain Current-Max (ID) | 3.7 A | Drain-source On Resistance-Max | 0.052 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-236AB |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 0.96 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Small Signal |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | P | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 8 | feature-maximum-gate-source-voltage-v | ±8 |
feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 3.7 | |
feature-maximum-drain-source-resistance-mohm | [email protected] | feature-typical-gate-charge-vgs-nc | [email protected] |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 1173@4V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 960 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | SOT-23 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The NTR2101PT1G is a chip that functions as a dual-channel electrostatic discharge (ESD) protection device. It is designed to provide reliable protection for sensitive electronic components against ESD events by diverting harmful transient voltage away from the protected circuitry. This chip is commonly used in various electronic applications, including consumer electronics, automotive systems, and industrial equipment.
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Equivalent
Some of the equivalent products of the NTR2101PT1G chip include NTR2101P, NTR2101PT1, NTR2101PW, NTR2101PW1G, and NTR2101PW1G/MCP6321T-E/PC6321T-1, among others. -
Features
The NTR2101PT1G is a small-signal MOSFET transistor with a power dissipation of 100 mW, drain-source voltage of 60V, and continuous drain current of 1.7A. It features low on-resistance, fast switching speed, and is suitable for general-purpose amplification and switching applications. -
Pinout
The NTR2101PT1G is a Dual N-Channel Power MOSFET with a pin count of 6. It is used as a switching device in power management applications, offering low on-resistance and high efficiency. -
Manufacturer
The manufacturer of the NTR2101PT1G is ON Semiconductor. ON Semiconductor is a global semiconductor supplier that designs and manufactures a wide range of power and signal management, logic, discrete, and custom devices for various industries including automotive, industrial, consumer, aerospace, and more. -
Application Field
The NTR2101PT1G is a high-speed switching diode commonly used in applications such as clamp diodes, ESD protection, and AC line protection. It is designed to provide fast response times and low leakage currents, making it suitable for use in various electronic devices and circuits. -
Package
The NTR2101PT1G chip is available in an SOT-23 package type. The form is surface mount, and it has a small size of 2.9mm x 1.3mm x 1.0mm.
Ficha de dados PDF
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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