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$5000MJB44H11T4G
Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount D²PAK
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Marcas: onsemi
Parte do fabricante #: MJB44H11T4G
Ficha de dados: MJB44H11T4G Ficha de dados (PDF)
Pacote/Caso: D2PAK-3
Tipo de Produto: Single Bipolar Transistors
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MJB44H11T4G Descrição geral
The MJB44H11T4G is a high-performance power transistor designed for NPN (Negative-Positive-Negative) applications. With a collector-emitter voltage (V(br)ceo) of 80V, this transistor is capable of handling high voltage requirements in various electronic circuits. The transition frequency (ft) of 50MHz makes it ideal for fast switching applications, while the power dissipation (Pd) of 50W ensures reliable performance under heavy load conditions. With a DC collector current of 10A and a DC current gain (hFE) of 40hFE, the MJB44H11T4G provides the necessary amplification and power handling capabilities required in modern electronic devices
Características
- Compact Design Saves Space
- High Efficiency for Longer Battery Life
- Low Power Consumption Ideal for Mobile Devices
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | onsemi | Product Category: | Bipolar Transistors - BJT |
RoHS: | Details | Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-3 | Transistor Polarity: | NPN |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 80 V |
Collector- Base Voltage VCBO: | - | Emitter- Base Voltage VEBO: | 5 V |
Collector-Emitter Saturation Voltage: | 1 V | Maximum DC Collector Current: | 10 A |
Pd - Power Dissipation: | 50 W | Gain Bandwidth Product fT: | 50 MHz |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | MJB44H11 | Packaging: | MouseReel |
Brand: | onsemi | Continuous Collector Current: | 10 A |
DC Collector/Base Gain hfe Min: | 60 | Height: | 4.83 mm |
Length: | 10.29 mm | Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 800 | Subcategory: | Transistors |
Technology: | Si | Width: | 9.65 mm |
Unit Weight: | 0.050054 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The MJB44H11T4G is a high voltage, high-speed NPN transistor chip designed for use in automotive ignition systems. It offers low saturation voltage and fast switching speeds, making it ideal for applications requiring high performance and reliability. This chip is part of ON Semiconductor's wide range of power transistors for automotive and industrial applications.
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Equivalent
The equivalent products of MJB44H11T4G chip are MJB44H11T30G, MJB44H11T5G, and MJB44H11T10G. These chips have similar specifications and characteristics, making them suitable replacements for the original chip in various applications. -
Features
MJB44H11T4G is a N-channel, enhancement mode, fast switching, power MOSFET. It has a high input impedance, low on-state resistance, and is suitable for high-speed switching applications. This MOSFET is designed for use in power management applications such as motor control, power supplies, and inverters. -
Pinout
The MJB44H11T4G is a dual N-channel Power MOSFET with a total of 8 pins. It is typically used for high power and high current applications in industrial and automotive systems. The device functions as a switch to control the flow of current in electronic circuits. -
Manufacturer
MJB44H11T4G is manufactured by ON Semiconductor, a leading supplier of semiconductor-based solutions. ON Semiconductor specializes in power and signal management, discrete and custom solutions for a variety of industries including automotive, communications, consumer electronics, and industrial applications. -
Application Field
MJB44H11T4G is a high-power N-channel MOSFET suitable for applications requiring high power amplification, such as audio amplifiers, power supplies, motor control, and high-frequency converters. It can also be used in automotive and industrial applications where high current and voltage ratings are necessary. -
Package
The MJB44H11T4G chip is a Power MOSFET in a TO-263-3 package. It has a form factor of a surface-mount device with a size of 10mm x 7.6mm x 4.6mm.
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