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Infineon IRF2807PBF
The IRF2807PBF is a MOSFET component engineered for robust current handling
Marcas: Infineon
Parte do fabricante #: IRF2807PBF
Ficha de dados: IRF2807PBF Datasheet (PDF)
Pacote/Caso: TO-220-3
Status RoHS:
Condição de estoque: 2902 peças, novo original
Tipo de Produto: Transistores
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
| Quantidade | Preço unitário | Preço Externo |
|---|---|---|
| 1 | $0,695 | $0,695 |
| 10 | $0,583 | $5,830 |
| 50 | $0,468 | $23,400 |
| 100 | $0,413 | $41,300 |
| 500 | $0,379 | $189,500 |
| 1000 | $0,361 | $361,000 |
In Stock:2902 PCS
IRF2807PBF Descrição geral
The IRF2807PBF is a power MOSFET transistor manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 82A. This MOSFET is designed for high power applications, such as motor controls, power supplies, and inverters.The IRF2807PBF has a low on-resistance, typically 30 mΩ, which helps in reducing power losses and increasing efficiency in high current applications. It also has a fast switching speed, with a typical rise time of 30ns and fall time of 43ns, making it suitable for high frequency switching applications.This MOSFET comes in a TO-220 package, which provides good thermal performance for dissipating heat generated during operation. It has a junction-to-ambient thermal resistance of 62°C/W, ensuring reliable operation even at high power levels.The IRF2807PBF is RoHS compliant, making it environmentally friendly and suitable for use in various electronic products.
Características
- Enhanced power MOSFET
- Voltage rating: 75V
- Continuous drain current: 82A
- Low on-resistance: 8.0mΩ
- Fast switching performance
- Designed for high power applications
- TO-220AB package
- RoHS compliant
Aplicativo
- Switching power supplies
- Motor control
- DC-DC and AC-DC converters
- Lighting applications
- Automotive systems
- Industrial automation
- Robotics
- Renewable energy
- Battery management systems
- Telecommunications
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 75 V |
| Id - Continuous Drain Current | 82 A | Rds On - Drain-Source Resistance | 13 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 106.7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
| Channel Mode | Enhancement | Brand | Infineon Technologies |
| Configuration | Single | Height | 15.65 mm |
| Length | 10 mm | Product Type | MOSFET |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
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Part points
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The IRF2807PBF is a high-power MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for efficient switching applications. It has a maximum drain current rating of 82A and a voltage rating of 75V, making it suitable for use in power supplies, motor control, and other high-current applications. The chip offers low on-resistance and high switching speed, providing improved performance and reduced power losses.
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Equivalent
Some equivalent products to the IRF2807PBF chip include Fairchild Semiconductor's FDPF33N25, STMicroelectronics' STP33N25, and Infineon Technologies' IPP037N10N3 G. These chips have similar power MOSFET specifications and can be used as alternative options in various applications. -
Features
The features of the IRF2807PBF include a high current rating of 82A, low on-resistance of 0.028Ω, fast switching speed, and a voltage rating of 75V. It also has a TO-220 package, making it suitable for various power applications such as motor control, power supplies, and inverters. -
Pinout
The IRF2807PBF is a power MOSFET transistor with a TO-220 package. It has three pins: Gate (G), Drain (D), and Source (S). The Gate pin controls the switching action, while the Drain pin carries the current, and the Source pin is connected to the ground. Its pin count is 3. -
Manufacturer
The manufacturer of the IRF2807PBF is Infineon Technologies. Infineon Technologies is a global semiconductor company that specializes in manufacturing and providing a wide range of products for various industries, including automotive, industrial, power, and consumer electronics. -
Application Field
The IRF2807PBF is a high-power N-channel MOSFET that can be used in various applications such as switch mode power supplies, motor control, solar inverters, and uninterruptible power supplies (UPS). It is suitable for high current and high voltage applications due to its low on-resistance and high power dissipation capabilities. -
Package
The IRF2807PBF chip is available in a TO-220AB package type, which is a standard through-hole package. It has a form of a metal tab on top for heat dissipation and three leads for connectivity. The dimensions of the package are approximately 10.31mm x 9.54mm x 4.57mm.
Ficha de dados PDF
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