Infineon IPD110N12N3GATMA1
Power Field-Effect Transistor
Marcas: Infineon
Parte do fabricante #: IPD110N12N3GATMA1
Ficha de dados: IPD110N12N3GATMA1 Datasheet (PDF)
Pacote/Caso: PG-TO252-3
Status RoHS:
Condição de estoque: 3933 peças, novo original
Tipo de Produto: Transistores
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $1,901 | $1,901 |
10 | $1,674 | $16,740 |
30 | $1,532 | $45,960 |
100 | $1,195 | $119,500 |
500 | $1,130 | $565,000 |
1000 | $1,102 | $1102,000 |
In Stock:3933 PCS
IPD110N12N3GATMA1 Descrição geral
The IPD110N12N3GATMA1 is a N-channel power MOSFET produced by Infineon Technologies. It belongs to the OptiMOS 5 family of power MOSFETs, which are designed to provide low on-state resistance and high system efficiency in a wide range of applications, including motor control, power supplies, and DC-DC converters.The IPD110N12N3GATMA1 features a drain-source voltage of 120V, a continuous drain current of 110A, and a low on-resistance of 3mΩ. This MOSFET is housed in a TO-252 package, which is a small surface-mount package that allows for easy integration into PCB designs.One of the key features of the IPD110N12N3GATMA1 is its low gate charge, which enables fast switching speeds and efficient operation. This, combined with its low on-resistance, helps to minimize power losses and improve overall system performance.Additionally, this MOSFET is RoHS compliant, making it environmentally friendly and suitable for use in applications that require compliance with environmental regulations.
Características
- 100V, 110A N-channel power MOSFET
- Low on-resistance RDS(on) of 6.5 mΩ
- Enhanced switching performance
- Optimized for high-current applications
- Advanced Trench Technology
- Halogen-free according to IEC 61249-2-21
- Qualified according to AEC Q101
- RoHS compliant
Aplicativo
- Automotive industry - used in electric vehicle powertrains, battery management systems, and charging stations
- Industrial automation - for motor control, power supplies, and robotics
- Solar energy - in inverters and power optimizers
- Telecommunications - for power amplifiers and base station power supplies
- Military and aerospace - in radar systems and electronic warfare applications
- Consumer electronics - for portable devices and home appliances
- Medical devices - in imaging systems and surgical equipment
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
functionalPacking | TAPE & REEL | addProductInfo | MS, RoHS compliant, non dry |
packageNameMarketing | DPAK | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | N59 | productClassification | COM |
productStatusInfo | active | hfgr | A |
packageName | PG-TO252-3 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001127808 |
fourBlockPackageName | PG-TO252-3-313 | rohsCompliant | yes |
opn | IPD110N12N3GATMA1 | completelyPbFree | no |
sapMatnrSali | SP001127808 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IPD110N12N3GATMA1 chip is a power MOSFET transistor designed for use in automotive applications. It has a voltage rating of 1200V and a current rating of 110A. This chip offers low on-resistance and high efficiency, making it suitable for use in electric vehicles and other power electronics systems.
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Equivalent
An equivalent product of the IPD110N12N3GATMA1 chip is the FDP110N12N3GATM. -
Features
The IPD110N12N3GATMA1 is a power MOSFET transistor that is low on-resistance, suitable for high-current applications. It features a voltage rating of 1200V and a current rating of 100A, making it appropriate for various power conversion and control applications. -
Pinout
The IPD110N12N3GATMA1 has a pin count of 8. It is a power MOSFET that has a drain, source, and gate terminal. It is designed for applications requiring high power and efficiency in a compact package. -
Manufacturer
The manufacturer of the IPD110N12N3GATMA1 is Infineon Technologies. It is a global semiconductor company specializing in design, production, and marketing of various semiconductor solutions. Infineon Technologies primarily operates in the fields of automotive, industrial, power, and security applications, providing innovative products and technologies to customers worldwide. -
Application Field
The IPD110N12N3GATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications where high power and low on-resistance are required. It can be used in areas such as power supplies, motor control systems, DC-DC converters, and other high-power switching applications. -
Package
The IPD110N12N3GATMA1 chip comes in a TO-252-3 package type, also known as DPAK (Plastic-Encapsulated Transistor). The form is a surface mount. Its size is compact, measuring approximately 6.5mm x 6.1mm x 2.5mm.
Ficha de dados PDF
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