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$5000SCTH35N65G2V-7AG
MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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Marcas: STMicroelectronics
Parte do fabricante #: SCTH35N65G2V-7AG
Ficha de dados: SCTH35N65G2V-7AG Ficha de dados (PDF)
Pacote/Caso: H2PAK-7
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SCTH35N65G2V-7AG Descrição geral
ST has utilized its advanced and innovative 2nd generation SiC MOSFET technology to create the SCTH35N65G2V-7AG, a silicon carbide Power MOSFET device that offers remarkable performance. With its impressively low on-resistance per unit area and excellent switching capabilities, this device is designed to deliver optimal efficiency and reliability in diverse scenarios. Additionally, its minimal variation of switching loss with junction temperature further enhances its dependability
Características
- Advanced package design for improved thermal performance
- Low ESR and high capacitance to voltage ratio
- Robust and reliable under harsh conditions
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
RoHS: | Details | Technology: | SiC |
Mounting Style: | SMD/SMT | Package / Case: | H2PAK-7 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V | Id - Continuous Drain Current: | 45 A |
Rds On - Drain-Source Resistance: | 67 mOhms | Vgs - Gate-Source Voltage: | - 10 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V | Qg - Gate Charge: | 73 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 208 W | Channel Mode: | Enhancement |
Qualification: | AEC-Q101 | Packaging: | MouseReel |
Brand: | STMicroelectronics | Configuration: | Single |
Fall Time: | 14 ns | Product Type: | MOSFET |
Rise Time: | 9 ns | Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs | Transistor Type: | 1 N - Channel |
Typical Turn-Off Delay Time: | 35 ns | Typical Turn-On Delay Time: | 16 ns |
Unit Weight: | 0.051147 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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SCTH35N65G2V-7AG is a power MOSFET chip designed for high efficiency and robust performance in various power applications. It features low on-resistance, high current capability, and a compact size. This chip is well-suited for use in power supplies, motor control, and other high-power applications where efficiency and reliability are crucial.
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Equivalent
The equivalent products of SCTH35N65G2V-7AG chip are SCTH35N65G2V-16A, SCTH35N65G2V-7.4A, SCTH10N80G2V-22A, and SCTH10N80G2V-22A. -
Features
1. VDS = 650 V 2. ID = 35 A 3. RDS(on) = 0.2 Ohms 4. High power efficiency 5. Suitable for various industrial and consumer applications 6. Low switching losses 7. RoHS compliant. -
Pinout
The SCTH35N65G2V-7AG is a 7-pin insulated gate bipolar transistor (IGBT) module. It is commonly used for high power applications, such as motor drives and inverters. The functions of the pins include gate, collector, and emitter connections for controlling power flow and switching capabilities. -
Manufacturer
SCTH35N65G2V-7AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, manufactures, and markets a range of products used in various applications, including automotive, industrial, and consumer electronics. They are known for their high-performance semiconductor solutions and innovative technology offerings in the industry. -
Application Field
SCTH35N65G2V-7AG is typically used in high-performance power supplies, motor drives, and industrial applications due to its high voltage rating, low on-resistance, and fast switching speed. It is commonly found in electric vehicles, solar inverters, UPS systems, and welding equipment. -
Package
The SCTH35N65G2V-7AG chip is in a TO-247 package type with a tab attached and a form of a single-die. The chip size is 10.4 mm x 15.9 mm x 3.3 mm.
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