Pedidos acima de
$5000MMDF2C03HDR2G
MOSFET COMP S08C 30V 4.1A 70mOhm
Marcas: onsemi
Parte do fabricante #: MMDF2C03HDR2G
Ficha de dados: MMDF2C03HDR2G Ficha de dados (PDF)
Pacote/Caso: 8-SOIC
Tipo de Produto: FET, MOSFET Arrays
Status RoHS:
Condição de estoque: 5.994 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MMDF2C03HDR2G Descrição geral
The MMDF2C03HDR2G is a reliable and efficient option for designers and engineers in need of a power MOSFET solution for their low voltage, high speed switching applications. Its miniature size, low RDS(on), and true logic level performance make it an ideal choice for applications where power efficiency is crucial. The device's ability to withstand high energy in the avalanche and commutation modes, paired with its low reverse recovery time for the drain-to-source diode, sets it apart from other options on the market
Características
- Soft Recovery for Reduced EMI
- High Efficiency with Low VF
- Pulse by Pulse Current Limiting
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
Transistor Polarity | N-Channel, P-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 4.1 A |
Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Brand | onsemi | Configuration | Dual |
Fall Time | 23 ns, 194 ns | Forward Transconductance - Min | 3.6 S |
Height | 1.5 mm | Length | 5 mm |
Product Type | MOSFET | Rise Time | 65 ns, 18 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel, 1 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 30 ns, 81 ns | Typical Turn-On Delay Time | 12 ns, 16 ns |
Width | 4 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The MMDF2C03HDR2G is a MOSFET H-bridge power switch designed for high-speed switching applications. It offers low ON-resistance and space-saving packaging, making it ideal for use in automotive, industrial, and consumer electronics applications. This chip is capable of controlling high current and voltage levels effectively, improving system efficiency and performance.
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Equivalent
The equivalent products of MMDF2C03HDR2G chip are FDMS86181 and FDMS86101BZ. These are both dual N-channel PowerTrench MOSFETs with similar specifications and performance characteristics. -
Features
MMDF2C03HDR2G is a high-gain, low noise figure GaAs MESFET RF amplifier with a frequency range of 5 to 500 MHz. It offers high linearity, high gain, and low power consumption, making it suitable for various communication and RF applications. -
Pinout
The MMDF2C03HDR2G is a dual 2:1 Mux/Demux switch with a pin count of 56. It is used for data routing and signal switching applications in communication systems and networking equipment. It features high-speed operation and low crosstalk performance. -
Manufacturer
The manufacturer of MMDF2C03HDR2G is ON Semiconductor, which is a semiconductor manufacturing company. They design and produce a wide range of power management, connectivity, and analog semiconductor products for a variety of industries, including automotive, industrial, and consumer electronics. -
Application Field
MMDF2C03HDR2G is a high-power, low-loss Schottky diode commonly used in applications such as RF detector circuits, high-frequency mixers, and signal demodulation. Its high power handling capability makes it suitable for use in radar systems, microwave communications, and other high-frequency applications requiring fast switching speeds and low noise. -
Package
The MMDF2C03HDR2G chip is housed in a DFN-8 (2mm x 2mm) package. It is a high-speed, high-voltage MOSFET driver with a peak output current of 2A, designed for driving small and medium power N-channel MOSFETs in high-speed switching applications.
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Temos produtos ricos que podem atender às suas diversas necessidades.
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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