MMBT5551LT1G

Part points

• The MMBT5551LT1G is a high-speed switching transistor chip commonly used in electronic circuits. It is a general-purpose NPN bipolar junction transistor with a maximum collector current of 600mA and a maximum collector-emitter voltage of 160V. This chip is ideal for applications requiring fast switching speeds and low power consumption.

• Equivalent

  Some equivalent products of MMBT5551LT1G chip are MMBT5551LT1, MMBT5551-TP, and MMBT5551LT3G.

• Features

  MMBT5551LT1G is a low voltage NPN transistor with high current gain and low saturation voltage. It has a low profile and small footprint, making it ideal for portable electronic devices. Additionally, it has a maximum power dissipation of 300mW and a maximum collector current of 0.6A.

• Pinout

  The MMBT5551LT1G is a NPN bipolar junction transistor with a pin count of three (Base, Emitter, Collector) in a SOT-23 package. It is commonly used for amplification and switching applications in electronic circuits due to its high current and voltage ratings.

• Manufacturer

  MMBT5551LT1G is manufactured by ON Semiconductor, an American semiconductor supplier company that specializes in power and analog semiconductor components. ON Semiconductor provides a variety of products for various industries such as automotive, industrial, and consumer electronics.

• Application Field

  MMBT5551LT1G is commonly used as a general-purpose transistor for applications in amplification, switching, and signal processing circuits. It is frequently used in audio amplifiers, voltage regulators, oscillator circuits, and small signal amplifiers. Its high current gain and low noise make it suitable for a wide range of electronic devices and applications.

• Package

  The MMBT5551LT1G chip is a general-purpose NPN amplifier transistor in a SOT-23 surface-mount package. It has a form factor of SOT-23 with a size of 2.9mm x 1.3mm.