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$5000IXTH130N10T
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-247
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Marcas: IXYS
Parte do fabricante #: IXTH130N10T
Ficha de dados: IXTH130N10T Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXTH130N10T Descrição geral
Engineered for excellence, the IXTH130N10T Trench Gate Power MOSFETs deliver exceptional performance in low voltage/high current scenarios. Their ultra-low RDS(on) rating sets the stage for efficient power management, while their wide operating temperature range of -40 °C to 175 °C ensures reliability even in harsh conditions. From automotive systems to industrial applications, these MOSFETs are the go-to choice for demanding environments
Características
- Wide Operating Range
- High Reliability Standards
- Automated Testing Support
Aplicativo
- High-performance switching
- Reliable power supplies
- Robust DC-DC converters
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 130 A |
Rds On - Drain-Source Resistance: | 8.5 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V | Qg - Gate Charge: | 104 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 360 W | Channel Mode: | Enhancement |
Tradename: | HiPerFET | Series: | IXTH130N10 |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 28 ns |
Height: | 21.46 mm | Length: | 16.26 mm |
Product Type: | MOSFET | Rise Time: | 47 ns |
Factory Pack Quantity: | 30 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 44 ns |
Typical Turn-On Delay Time: | 30 ns | Width: | 5.3 mm |
Unit Weight: | 0.211644 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXTH130N10T is a power MOSFET transistor that is designed for high-speed switching applications. It has a drain-source voltage of 100V and a continuous drain current of 130A, making it suitable for power management in various electronic devices. The IXTH130N10T is commonly used in power supplies, motor control, and LED lighting applications.
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Equivalent
Some equivalent products of the IXTH130N10T chip are the IRFConfirms 321524 and IXGH 40N60C2D1. These products have similar power rating, current capacity, and voltage rating, making them suitable replacements for the IXTH130N10T in various applications. -
Features
IXTH130N10T is a power MOSFET with a voltage rating of 100V and a continuous current rating of 130A. It has a low on-resistance, high power dissipation capability, and is suitable for high efficiency power conversion applications. It also has a TO-247 package for easy mounting and thermal management. -
Pinout
IXTH130N10T is a high voltage, high speed IGBT with a TO-247 package. It has 3 pins: Gate, Collector, and Emitter. The Gate pin controls the switching of the transistor, while the Collector and Emitter pins are used for power connections. It can handle a voltage of 1000V and a current of 130A. -
Manufacturer
The manufacturer of IXTH130N10T is IXYS Corporation. It is a global company that specializes in the design, manufacture, and marketing of power semiconductors for various applications, including power conversion and control, motor control, and renewable energy. They provide a wide range of power management products and solutions to customers in various industries worldwide. -
Application Field
Some application areas of IXTH130N10T, a power MOSFET, include motor control, power supplies, inverters, and battery management systems. It can also be used in welding equipment, DC-DC converters, and uninterruptible power supplies due to its high voltage and high current handling capabilities. -
Package
The IXTH130N10T chip is available in a TO-247 package. It is in a through-hole form and measures 16.51mm x 10.41mm x 4.57mm in size.
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