Pedidos acima de
$5000IXTH12N150
Low-voltage high-current power semiconductor component
Marcas: IXYS
Parte do fabricante #: IXTH12N150
Ficha de dados: IXTH12N150 Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $9,237 | $9,237 |
10 | $8,503 | $85,030 |
30 | $8,055 | $241,650 |
100 | $7,681 | $768,100 |
Em estoque: 9.458 PCS
IXTH12N150 Descrição geral
In pulse circuits, the IXTH12N150 MOSFET plays a crucial role in regulating current flow and ensuring smooth operation. Its robust construction and performance under high voltage conditions make it a preferred choice for applications requiring precision and stability. Furthermore, its compatibility with current regulators highlights its adaptability in diverse power switching systems
Características
- Compact surface mount designs for space-saving
- Fast switching and low conduction losses
- Achieves high efficiency with high current density
- Thermal resistance and thermal shutdown protection
- Laser-trimmed resistors for precise control
- Robust and reliable performance guaranteed
Aplicativo
- High breakdown voltage
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1.5 kV | Id - Continuous Drain Current: | 12 A |
Rds On - Drain-Source Resistance: | 2 Ohms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V | Qg - Gate Charge: | 106 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 890 W | Channel Mode: | Enhancement |
Series: | IXTH12N150 | Packaging: | Tube |
Brand: | IXYS | Configuration: | Single |
Fall Time: | 14 ns | Forward Transconductance - Min: | 8 S |
Height: | 21.46 mm | Length: | 16.26 mm |
Product Type: | MOSFET | Rise Time: | 16 ns |
Factory Pack Quantity: | 30 | Subcategory: | MOSFETs |
Type: | High Voltage Power MOSFET | Typical Turn-Off Delay Time: | 53 ns |
Typical Turn-On Delay Time: | 26 ns | Width: | 5.3 mm |
Unit Weight: | 0.211644 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXTH12N150 is a high voltage, high power MOSFET transistor designed for use in high-speed switching applications. It has a maximum voltage rating of 1500V and a continuous current rating of 12A. The transistor is suitable for applications such as power supplies, motor control, and inverters where high efficiency and reliability are required.
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Equivalent
Some equivalent products to the IXTH12N150 chip include the IRFP460 and IRFP450 power MOSFETs. These options offer similar performance and specifications, making them suitable substitutes for the IXTH12N150 chip in various applications. -
Features
The IXTH12N150 is a power MOSFET designed for high-speed, high-frequency switching applications. It features a low on-resistance of 0.12 ohms, a high current rating of 150A, a low gate charge of 105nC, and a maximum operating temperature of 175°C. It is suitable for use in power supplies, motor control, and other high-power applications. -
Pinout
IXTH12N150 is a high voltage, high current IGBT power transistor with a TO-247 package. It has 3 pins: gate (G), collector (C), and emitter (E). It is typically used for power electronics applications such as motor control, power supplies, and inverters. -
Manufacturer
IXTH12N150 is manufactured by IXYS Corporation, a global pioneer in the power semiconductor market. The company specializes in designing, developing, and manufacturing advanced semiconductor technologies for industrial, communications, consumer, and medical applications. IXYS Corporation is known for its high-quality products, innovative solutions, and commitment to sustainability. -
Application Field
IXTH12N150 is a high voltage MOSFET transistor designed for use in various applications including power supplies, inverters, motor control, and industrial equipment. It is commonly used in switching regulators, converters, and amplifiers where high voltage and high efficiency are required. -
Package
The IXTH12N150 chip is a power MOSFET transistor with a TO-247 package type. It has a through-hole mounting form. The size of the chip is 10.25mm x 15.5mm x 5.59mm.
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Temos produtos ricos que podem atender às suas diversas necessidades.
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