Pedidos acima de
$5000
IXFX26N90
26 Amps MOSFET with 900V and 0.3 Rds
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: IXYS CORP
Parte do fabricante #: IXFX26N90
Ficha de dados: IXFX26N90 Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Status RoHS:
Condição de estoque: 7.707 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $22,087 | $22,087 |
200 | $8,548 | $1709,600 |
500 | $8,248 | $4124,000 |
1000 | $8,099 | $8099,000 |
Em estoque: 7.707 PCS
IXFX26N90 Descrição geral
Designed for both hard switching and resonant mode applications, the N-Channel HiPerFET™ Standard series, including product IXFX26N90, is an ideal choice for power MOSFETs. With its low gate charge and excellent ruggedness with a fast intrinsic diode, this series offers reliability and high performance. Available in a variety of standard industrial packages, including isolated types, the N-Channel HiPerFET™ Standard series provides engineers and designers with a versatile and convenient solution for their power MOSFET needs
![IXFX26N90 IXFX26N90](/files/uploads/product/b/0c82c923626043228c115cab5b735c6f.webp)
Características
- Ultra-Low On-State Resistance
- High Frequency Response
- Low Noise Emissions
- Compact Package Design
Aplicativo
- Efficient power solution
- Compact and reliable
- Cost-effective option
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | IXYS CORP |
Package Description | PLUS247, 3 PIN | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 3000 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 900 V | Drain Current-Max (ID) | 26 A |
Drain-source On Resistance-Max | 0.3 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSIP-T3 | JESD-609 Code | e1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | IN-LINE | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 560 W | Pulsed Drain Current-Max (IDM) | 104 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN SILVER COPPER | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXFX26N90 chip is a power MOSFET designed for high-performance applications. It features a low on-state resistance, high current capability, and excellent thermal performance. This chip is commonly used in power supply, motor control, and other high-power applications where efficient power management is critical.
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Equivalent
There are no direct equivalent products to the IXFX26N90 chip. However, similar power MOSFET chips from different manufacturers include Infineon's IRFPE40 and STMicroelectronics' STW20N90K5. It is recommended to consult datasheets and technical specifications to determine compatibility and suitability for your specific application. -
Features
1. IXFX26N90 is a power MOSFET transistor. 2. It has a voltage rating of 900V and a continuous current rating of 26A. 3. The transistor is compact and designed for high power applications. 4. It has low on-state resistance and high switching speed. 5. IXFX26N90 is suitable for use in power supplies, motor controls, and other high-power electronic circuits. -
Pinout
The IXFX26N90 is a MOSFET transistor with a pin count of 3. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. It is used for high power applications such as motor control and power supplies. -
Manufacturer
The IXFX26N90 is manufactured by IXYS Corporation, a leading global manufacturer of power semiconductors, integrated circuits, and other advanced electronics technologies. They specialize in developing high-performance power switching and control devices for a wide range of industries, including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
The IXFX26N90 is a high voltage power MOSFET commonly used in applications such as power supplies, motor drives, and high frequency inverters. It is also suitable for use in welding equipment, induction heating, and other industrial and automotive applications requiring high power and efficiency. -
Package
The IXFX26N90 chip is in a TO-247 package, with a through-hole form factor, and a size of approximately 17.5mm x 11.3mm x 4.6mm.
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