Pedidos acima de
$5000IXFN64N60P
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B
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Marcas: IXYS
Parte do fabricante #: IXFN64N60P
Ficha de dados: IXFN64N60P Ficha de dados (PDF)
Pacote/Caso: SOT-227B
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 8.667 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXFN64N60P Descrição geral
Designed with precision and innovation in mind, the Polar™ HiPerFETs deliver exceptional performance characteristics that set them apart from traditional power MOSFETs. With a focus on efficiency and speed, this product family offers a reliable solution for demanding applications in the fields of motor control and power supply management
Características
- High Reliability Rate
- Low Crosstalk Risk
- Fault-Tolerant Design
Aplicativo
- Inverters for Solar Panels
- LED Driver Circuits
- Induction Heating Systems
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer | IXYS | Product Category | Discrete Semiconductor Modules |
RoHS | Details | Product | Power MOSFET Modules |
Type | HiperFET | Technology | Si |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Screw Mount |
Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXFN64N60 |
Brand | IXYS | Configuration | Single |
Fall Time | 24 ns | Height | 9.6 mm |
Id - Continuous Drain Current | 50 A | Length | 38.2 mm |
Number of Channels | 1 Channel | Pd - Power Dissipation | 700 W |
Product Type | Discrete Semiconductor Modules | Rds On - Drain-Source Resistance | 96 mOhms |
Rise Time | 23 ns | Factory Pack Quantity | 10 |
Subcategory | Discrete Semiconductor Modules | Tradename | HiPerFET |
Transistor Polarity | N-Channel | Typical Turn-Off Delay Time | 79 ns |
Typical Turn-On Delay Time | 28 ns | Vds - Drain-Source Breakdown Voltage | 600 V |
Width | 25.07 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXFN64N60P is a high voltage, high power MOSFET chip designed for use in various applications such as power supplies, motor control, and inverters. It has a maximum voltage rating of 600V and a current rating of 64A. This chip offers low on-state resistance and fast switching speeds, making it ideal for high power applications that require efficient performance.
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Equivalent
Some equivalent products to the IXFN64N60P chip are Infineon's IPP60R360C6, STMicroelectronics' STGWT40V60DF, and Fairchild Semiconductor's FGH60N60SMD. These MOSFETs have similar specifications and performance characteristics to the IXFN64N60P. -
Features
The IXFN64N60P is a 600V high-speed switching IGBT that offers low Vce(sat) and high switching speed. It has a rugged and reliable design for demanding applications. This IGBT also features a high current capability and low gate charge, making it ideal for power factor correction, UPS, and motor drive applications. -
Pinout
The IXFN64N60P is a 3-pin IGBT transistor with a TO-268 package. It is a N-channel SiC power MOSFET with a maximum current rating of 64A and a breakdown voltage of 600V. Its function is to switch high-power loads in industrial applications. -
Manufacturer
IXFN64N60P is manufactured by IXYS Corporation. IXYS Corporation is a global power semiconductor and integrated circuit manufacturer. They specialize in the development, manufacturing, and marketing of advanced power semiconductor devices, integrated circuits, and modules. Their products are used in a wide range of industries including automotive, industrial, telecommunications, and consumer electronics. -
Application Field
IXFN64N60P is a high-voltage, high-current IGBT designed for use in power supply, motor control, and welding applications. It is commonly used in industrial automation, renewable energy systems, and electric vehicle charging stations. Its high power handling capability and low switching losses make it ideal for high power applications that require efficient and reliable operation. -
Package
The IXFN64N60P chip is a power semiconductor made in a TO-268 package. It has a module form and size of 14 mm x 28 mm x 6 mm.
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