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IXFN50N80Q2
N-Channel Silicon Metal-oxide Semiconductor FET
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Marcas: Ixys
Parte do fabricante #: IXFN50N80Q2
Ficha de dados: IXFN50N80Q2 Ficha de dados (PDF)
Pacote/Caso: SOT-227-4
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
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1 | $34,417 | $34,417 |
30 | $33,224 | $996,720 |
Em estoque: 9.458 PCS
IXFN50N80Q2 Descrição geral
The IXFN50N80Q2 power MOSFET from IXYS Corporation stands out with its impressive voltage and current ratings. With the ability to handle high voltages up to 800 volts and currents up to 80 amps, this MOSFET is a reliable choice for demanding applications where power efficiency and performance are crucial. Its N-channel enhancement-mode design ensures efficient operation, making it suitable for a wide range of power electronics projects
![](/files/uploads/product/b/5b0001f2be1345388b8e86c5f4901e3a.webp)
Características
- This transistor has a voltage rating of 800V and a current rating of 50A.
- It features low on-state resistance and fast switching characteristics
- Suitable for use in power supplies, motor control and high-power applications
Aplicativo
- Optimal for renewable energy systems
- High voltage and current ratings
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | Discrete Semiconductor Modules | RoHS | Details |
Product | Power MOSFET Modules | Technology | Si |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Chassis Mount |
Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | IXYS |
Configuration | Single | Fall Time | 13 ns |
Height | 9.6 mm | Id - Continuous Drain Current | 50 A |
Length | 38.23 mm | Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.135 kW | Product Type | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance | 150 mOhms | Rise Time | 25 ns |
Factory Pack Quantity | 10 | Subcategory | Discrete Semiconductor Modules |
Tradename | HiPerFET | Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 60 ns | Typical Turn-On Delay Time | 26 ns |
Vds - Drain-Source Breakdown Voltage | 800 V | Width | 25.42 mm |
Unit Weight | 1.058219 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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IXFN50N80Q2 is a high-voltage, fast-switching MOSFET chip. It is designed for power amplification applications, particularly in motor control, UPS systems, and power supplies. It features low on-resistance, high current capacity, and high-speed switching capabilities. With a voltage rating of 800V and a current rating of 50A, this chip offers efficient and reliable performance in high-power applications.
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Equivalent
There are several equivalent products to the IXFN50N80Q2 chip, including the IRFS7530, FGB50N60SMD, IRFI9630G, and FGH40N60SFD. -
Features
The IXFN50N80Q2 is a power MOSFET transistor with a voltage rating of 800V, a current rating of 50A, and a low on-state resistance. It has a small form factor, high power density, and is suitable for use in applications such as power supplies, motor control, and inverters. -
Pinout
The IXFN50N80Q2 is a power MOSFET transistor. It has a pin count of 3, which includes a Drain pin, a Source pin, and a Gate pin. The Drain pin is used for power input and output, the Source pin is connected to the ground, and the Gate pin is used to control the transistor's operation. -
Manufacturer
The manufacturer of the IXFN50N80Q2 is IXYS Corporation. It is a semiconductor company that develops and produces power semiconductors, integrated circuits, and other electronic components for various applications, including power management and conversion, motor control, and telecommunications. -
Application Field
The IXFN50N80Q2 is a high-power MOSFET that can be used in various applications such as motor drives, power supplies, inverters, and industrial equipment. It is designed to handle high voltages and currents, making it suitable for demanding power electronics applications. -
Package
The IXFN50N80Q2 chip is available in a TO-247 package type. It has a quad construction and measures about 19mm x 8.8mm x 4.45mm in size.
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