IXFN36N100

Part points

• The IXFN36N100 chip is a power MOSFET manufactured by IXYS Corporation. It is designed for high voltage and high current applications in various electronic devices. The chip utilizes advanced semiconductor technology to provide efficient power handling and low on-state resistance. It is commonly used in power supplies, motor drives, inverters, and other industrial and consumer electronics applications.

• Equivalent

  Some equivalent products of the IXFN36N100 chip include the IXFN48N50P and the IXFN50N100P chips. These chips have similar specifications and can be used as alternatives in various applications.

• Features

  The IXFN36N100 is a power MOSFET transistor with a voltage rating of 1000V, a current rating of 36A, and a RDS(on) value of 0.055 ohms. It has a TO-247 package style, making it suitable for high power applications, such as motor control, power supplies, and inverters.

• Pinout

  The IXFN36N100 is a MOSFET transistor with a pin count of 3. The pin functions are as follows: Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source.

• Manufacturer

  The manufacturer of the IXFN36N100 is IXYS Corporation. It is an American semiconductor company that focuses on the development and production of power semiconductors, integrated circuits, and advanced materials.

• Application Field

  The IXFN36N100 is a high-voltage power MOSFET that can handle a maximum of 100V and has a current rating of 36A. It can be used in various applications such as power supplies, motor control, and inverters where high voltage and current capacity is required.

• Package

  The IXFN36N100 is a power semiconductor device, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is available in a TO-247 package, which is a commonly used industry standard for high-power devices. The TO-247 package has a typical length of 15.87mm, width of 22.86mm, and height of 5.84mm.