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$5000IPB044N15N5ATMA1
7-Pin N-channel MOSFET transistor designed for 150V applications with a maximum current of 174A
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Marcas: INFINEON TECHNOLOGIES AG
Parte do fabricante #: IPB044N15N5ATMA1
Ficha de dados: IPB044N15N5ATMA1 Ficha de dados (PDF)
Pacote/Caso: PG-TO263-7
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 6.260 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IPB044N15N5ATMA1 Descrição geral
The IPB044N15N5ATMA1 by Infineon is a top-of-the-line power MOSFET designed for low voltage drive applications. With a voltage rating of 150 V and OptiMOS™ 5 technology, it offers exceptional performance and efficiency, making it perfect for forklifts, e-scooters, and even in telecom and solar applications. Its PG-TO263-7 package ensures easy integration, and it is RoHS compliant, demonstrating adherence to environmental standards
Características
- Excellent gate charge x RDS (on)product(FOM)Very low on-resistance RDS(on)Very low reverse recovery charge (Qrr)175°CoperatingtemperaturePb-free lead plating; RoHS compliantQualifiedaccordingtoJEDEC1)for target applicationIdeal for high-frequency switching and synchronous rectificationHalogen-freeaccordingtoIEC61249-2-21
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | SMALL OUTLINE, R-PSSO-G6 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 53 Weeks, 1 Day |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 470 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 150 V | Drain Current-Max (ID) | 174 A |
Drain-source On Resistance-Max | 0.0044 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 696 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Series | OptiMOS™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 174A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | Rds On (Max) @ Id, Vgs | 4.4mOhm @ 87A, 10V |
Vgs(th) (Max) @ Id | 4.6V @ 264µA | Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 75 V |
Power Dissipation (Max) | 300W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TO263-7 |
Base Product Number | IPB044 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IPB044N15N5ATMA1 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) power transistor designed for high power applications. It has a voltage rating of 150V and a continuous drain current of 44A, making it suitable for use in a variety of industrial and automotive applications where high power handling capability is required.
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Equivalent
The equivalent products of IPB044N15N5ATMA1 chip are Infineon IPP044N15N3G and IPB052N15N3G. These chips are also high-performance power MOSFETs designed for applications requiring high efficiency and reliability. -
Features
The IPB044N15N5ATMA1 is a 150V OptiMOS™ 5 Power MOSFET with features such as low RDS(on) of 4.4mΩ, high efficiency, reduced power losses, and improved thermal performance. It is suitable for applications in automotive and industrial sectors requiring high power density and reliability. -
Pinout
The IPB044N15N5ATMA1 is a 150V, N-channel MOSFET power transistor with a pin count of 5. The functions of these pins include drain, source, gate, and two additional pins for enhanced thermal performance. It is commonly used in high power applications requiring efficient switching and low ON resistance. -
Manufacturer
The manufacturer of IPB044N15N5ATMA1 is Infineon Technologies AG, which is a German multinational semiconductor manufacturer. Infineon produces a wide range of semiconductor products used in various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors and solutions for efficient energy usage. -
Application Field
IPB044N15N5ATMA1 is a power MOSFET typically used in high power applications such as motor control, power supplies, and inverters. It is suitable for a wide range of automotive, industrial, and consumer electronics applications where high efficiency and reliability are required. -
Package
The IPB044N15N5ATMA1 chip is a surface-mount package with a form of TO263-3 (D2PAK) and a size of 10.3mm x 11mm x 4.8mm.
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