ON HUF75339P3
N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220-3
Marcas: ON Semiconductor, LLC
Parte do fabricante #: HUF75339P3
Ficha de dados: HUF75339P3 Datasheet (PDF)
Pacote/Caso: TO-220
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2229 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaHUF75339P3 Descrição geral
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75339.
Características
- 75A, 55V
- SPICE and SABER Thermal Impedance Models
- Temperature Compensated PSPICE® and SABER™ Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Aplicativo
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 12 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 130 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 200 W | Channel Mode: | Enhancement |
Tradename: | UltraFET | Series: | HUF75339P3 |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 25 ns |
Height: | 16.3 mm | Length: | 10.67 mm |
Product Type: | MOSFET | Rise Time: | 60 ns |
Factory Pack Quantity: | 50 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 20 ns | Typical Turn-On Delay Time: | 15 ns |
Width: | 4.7 mm | Part # Aliases: | HUF75339P3_NL |
Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | UltraFET |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
feature-maximum-drain-source-resistance-mohm | 12@10V | feature-typical-gate-charge-vgs-nc | 110@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 2000@25V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 200000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-220 |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | No |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The HUF75339P3 is a power MOSFET chip designed for high-current applications. It provides low ON-resistance and high switching speed, making it suitable for power management and motor control circuits. The chip can handle high levels of current while minimizing power dissipation and temperature rise. Its compact size and robust construction make it an efficient choice for various electronic devices and systems.
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Features
The HUF75339P3 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 75A, and a low on-resistance (RDS(on)) of 3.9mΩ. It features a compact and space-saving package, making it suitable for various applications in power electronics such as motor control, power supplies, and inverters. -
Pinout
The HUF75339P3 is a power MOSFET transistor. It has a pin count of 3. The three pins are G (gate), D (drain), and S (source), which are used for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75339P3 is ON Semiconductor. It is a global semiconductor supplier, providing a comprehensive portfolio of energy-efficient, easy-to-use products that help customers solve their unique design challenges across a wide range of applications. -
Application Field
The HUF75339P3 is a MOSFET transistor that is commonly used in automotive applications such as powertrain control, electric power steering, and ignition systems. It can also be used in industrial applications that require high power switching capability, such as motor control and battery charging systems. -
Package
The package type of the HUF75339P3 chip is TO-220, its form is through-hole, and the size is approximately 10.16mm x 15.87mm.
Ficha de dados PDF
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