Pedidos acima de
$5000
FQT3P20TF
P-Channel 200 V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: ONSEMI
Parte do fabricante #: FQT3P20TF
Ficha de dados: FQT3P20TF Ficha de dados (PDF)
Pacote/Caso: SOT-223-4
Status RoHS:
Condição de estoque: 5.625 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $0,862 | $0,862 |
10 | $0,727 | $7,270 |
30 | $0,659 | $19,770 |
100 | $0,591 | $59,100 |
500 | $0,552 | $276,000 |
1000 | $0,531 | $531,000 |
Em estoque: 5.625 PCS
FQT3P20TF Descrição geral
The FQT3P20TF is a cutting-edge P-Channel enhancement mode power MOSFET that showcases ON Semiconductor's innovative planar stripe and DMOS technology. Engineered to minimize on-state resistance and deliver top-notch switching capabilities, this MOSFET is designed for optimal performance and high resilience against avalanche energy. Whether you're working on switched mode power supplies, audio amplifiers, DC motor control, or variable switching power applications, the FQT3P20TF is the ideal solution for your needs
![FQT3P20TF FQT3P20TF](/files/uploads/product/b/bbacd58440a74b8b8e5f4085860219c7.webp)
Características
- Low power consumption, high efficiency
- Fast switching frequency, high reliability
- Robust construction, long lifespan
- Easy installation, simple maintenance
- High precision, accurate measurement
- Durable design, reliable performance
Aplicativo
- Engineering
- Manufacturing
- Construction
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Source Content uid | FQT3P20TF | Pbfree Code | Yes |
Part Life Cycle Code | Lifetime Buy | Ihs Manufacturer | ONSEMI |
Manufacturer Package Code | 318H-01 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 16 Weeks |
Samacsys Manufacturer | onsemi | Avalanche Energy Rating (Eas) | 150 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (ID) | 0.67 A |
Drain-source On Resistance-Max | 2.7 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W | Pulsed Drain Current-Max (IDM) | 2.7 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
![]() |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
![]() |
PayPal | cobrar taxa de serviço de 4,0%. |
![]() |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
![]() |
Western Union | charge US.00 banking fee. |
![]() |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
-
Etapa1 :produtos
-
Etapa2 :Embalagem a vácuo
-
Etapa3 :Saco antiestático
-
Etapa4 :Embalagem individual
-
Etapa5 :Caixas de embalagem
-
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
-
The FQT3P20TF chip is a power MOSFET device designed to control current flow in electronic circuits. It features a low on-resistance and high switching speed, making it suitable for various applications, including power management and motor control. This chip is commonly used in automotive and industrial sectors, where efficient power control is essential.
-
Features
The FQT3P20TF is a high-voltage N-channel MOSFET with a low on-resistance and low gate charge. It is designed for applications requiring high efficiency and compact designs. With its advanced features, it offers improved power handling, high-speed switching, and enhanced thermal performance. -
Pinout
The FQT3P20TF is a 20-pin power MOSFET transistor with three P-channel enhancement-mode transistors. Its pin count and function are specific to its packaging and manufacturer, and may vary. Please refer to the datasheet or manufacturer's documentation for detailed information. -
Manufacturer
The manufacturer of the FQT3P20TF is ON Semiconductor. It is a global semiconductor company that designs and produces a wide range of innovative power and signal management, logic, and discrete devices for various industries including automotive, communications, computing, industrial, medical, and consumer. -
Application Field
The FQT3P20TF is a power field-effect transistor (FET) specifically designed for high-frequency applications. It can be used in various applications including RF amplification, small signal switching, and other high-speed switching applications. -
Package
The FQT3P20TF chip is packaged in a TO-220F form factor, which is a through-hole package commonly used for high power applications. The size of the chip package is approximately 10.16mm x 15.87mm x 4.8mm (0.4" x 0.625" x 0.189").
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
-
Temos produtos ricos que podem atender às suas diversas necessidades.
-
A quantidade mínima de pedido começa em 1 unidade.
-
A menor taxa de envio internacional começa em US$ 0,00
-
365 dias de garantia de qualidade para todos os produtos